Photoconductive focal plane array based on HgTe quantum dots for fast and cost-effective short-wave infrared imaging

Gréboval, Charlie; Darson, David; Parahyba, Victor; Alchaar, Rodolphe; Abadie, Claire; Noguier, Vincent; Ferré, Simon; Izquierdo, Eva; Khalili, Adrien; Prado, Yoann; Potet, Pierre; Lhuillier, Emmanuel

doi:10.1039/d2nr01313d

Cited by 39 publications

(51 citation statements)

References 46 publications

(70 reference statements)

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“…Those results further con rmed the presence of internal gain in trapping-mode photodetectors. With the presence of photoconductive gain of 21, the actual EQE could be estimated to be ~ 8.3%, which which is similar to the photoconductive HgTe CQDs imagers without gain mechanism 32 . It is worth noting that hole trappingmode imagers were also tested with an integration time of 1ms and showed an average EQE of 199 % and PRNU of 20%, which is lower than the electron trapping-mode imagers.…”

Section: Trapping-mode Cmos-imagersmentioning

confidence: 60%

Wafer-scale Fabrication of CMOS-compatible Trapping-mode Infrared Imagers with Colloidal Quantum Dots

Tang

Zhang

Bi³

et al. 2022

Preprint

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Silicon-based complementary metal-oxide-semiconductors (CMOS) devices have dominated the technological revolution in the past decades. With increasing demands in machine vision, autonomous driving, and artificial intelligence, Si-CMOS imagers, as the major optical information input devices, face great challenges in spectral sensing ranges. In this paper, we demonstrate the development of CMOS-compatible infrared colloidal quantum dots (CQDs) imagers in the broadband short-wave and mid-wave infrared ranges (SWIR and MWIR, 1.5-5µm). A new device architecture of trapping-mode detector is proposed, fabricated, and demonstrated with lowered dark currents and improved responsivity. The CMOS-compatible fabrication process is completed with two-step sequential spin-coating processes of intrinsic and doped HgTe CQDs on an 8-inch CMOS readout wafer with photoresponse non-uniformity (PRNU) down to 4%, dead pixel rate of 0%, external quantum efficiency up to 175%, and detectivity as high as 2×1011Jones for extended SWIR (cut-off wavelength=2.5µm) @ 300K and 8×1010Jones for MWIR (cut-off wavelength=5.5µm) @ 80K. Both SWIR images and MWIR thermal images are demonstrated with great potential for semiconductor inspection, chemical identification, and temperature monitoring.

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Section: Trapping-mode Cmos-imagersmentioning

confidence: 60%

Wafer-scale Fabrication of CMOS-compatible Trapping-mode Infrared Imagers with Colloidal Quantum Dots

Tang

Zhang

Bi³

et al. 2022

Preprint

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“…Anthony et al designed a mid-wave infrared HgTe CQDs FPA detector [12]. Emmanuel et al prepared a cost-effective SWIR HgTe CQDs FPA imager [13]. They all chose a similar method by coupling emerging materials and FPA ROICs to prepare their optoelectronic imagers.…”

Section: Characterization Of Focal Plane Area Imagersmentioning

confidence: 99%

“…The efficacy of traditional bulk materials in broad-spectrum infrared FPA imagers is well established. Hence, ongoing research is mainly focusing on infrared-sensitive materials for the preparation of FPA devices [11][12][13][14].…”

Section: Progress Of the Infrared Focal Plane Arraymentioning

confidence: 99%

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CMOS-Compatible Optoelectronic Imagers

Liu²

2022

Coatings

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Silicon-based complementary metal oxide semiconductors have revolutionized the field of imaging, especially infrared imaging. Infrared focal plane array imagers are widely applied to night vision, haze imaging, food selection, semiconductor detection, and atmospheric pollutant detection. Over the past several decades, the CMOS integrated circuits modified by traditional bulk semiconductor materials as sensitivity sensors for optoelectronic imagers have been used for infrared imaging. However, traditional bulk semiconductor material-based infrared imagers are synthesized by complicated molecular beam epitaxy, and they are generally coupled with expensive flip-chip-integrated circuits. Hence, high costs and complicated fabrication processes limit the development and popularization of infrared imagers. Emerging materials, such as inorganic–organic metal halide perovskites, organic polymers, and colloidal quantum dots, have become the current focus point for preparing CMOS-compatible optoelectronic imagers, as they can effectively decrease costs. However, these emerging materials also have some problems in coupling with readout integrated circuits and uniformity, which can influence the quality of imagers. The method regarding coupling processes may become a key point for future research directions. In the current review, recent research progress on emerging materials for infrared imagers is summarized.

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“…HgTe nanocrystals , (NCs) have reached a high level of maturity that enables their use in complex devices such as lasers, light-emitting diodes (LEDs), − infrared (IR) sensors with carrier density − light–matter control, − and cameras. − All of these results have been obtained with NCs absorbing in the near- and mid-wave infrared range. Because of the semimetal nature of HgTe, the absorption spectrum of NCs can be tuned up to the terahertz (THz) frequency range, which corresponds to the spectral range in which the NC properties remain underexplored .…”

mentioning

confidence: 99%

Vanishing Confinement Regime in Terahertz HgTe Nanocrystals Studied under Extreme Conditions of Temperature and Pressure

Pierini

Capitani

Scimeca

et al. 2022

J. Phys. Chem. Lett.

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While HgTe nanocrystals (NCs) in the mid-infrared region have reached a high level of maturity, their far-infrared counterparts remain far less studied, raising the need for an in-depth investigation of the material before efficient device integration can be considered. Here, we explore the effect of temperature and pressure on the structural, spectroscopic, and transport properties of HgTe NCs displaying an intraband absorption at 10 THz. The temperature leads to a very weak modulation of the spectrum as opposed to what was observed for strongly confined HgTe NCs. HgTe NC films present ambipolar conduction with a clear prevalence of electron conduction as confirmed by transistor and thermoelectric measurements. Under the application of pressure, the material undergoes phase transitions from the zinc blende to cinnabar phase and later to the rock salt phase which we reveal using joint X-ray diffraction and infrared spectroscopy measurements. We discuss how the pressure existence domain of each phase is affected by the particle size.

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Photoconductive focal plane array based on HgTe quantum dots for fast and cost-effective short-wave infrared imaging

Abstract: HgTe nanocrystals, thanks to quantum confinement, present a broadly tunable band gap all over the infrared spectral range. In addition, significant efforts have been dedicated to the design of infrared...

Cited by 39 publications

References 46 publications

Wafer-scale Fabrication of CMOS-compatible Trapping-mode Infrared Imagers with Colloidal Quantum Dots

Wafer-scale Fabrication of CMOS-compatible Trapping-mode Infrared Imagers with Colloidal Quantum Dots

CMOS-Compatible Optoelectronic Imagers

Vanishing Confinement Regime in Terahertz HgTe Nanocrystals Studied under Extreme Conditions of Temperature and Pressure

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