Photoconductive antennas based on epitaxial films In_0.5Ga_0.5As on GaAs (1 1 1)A and (1 0 0) substrates with a metamorphic buffer

Abstract

Notice of redundant publication"Photoconductive antennas based on epitaxial films In 0.5 Ga 0.5 As on GaAs (1 1 1)A and (1 0 0) substrates with a metamorphic buffer" K A Kuznetsov et al 2018 Laser Physics 28 076206.Since the publication of this article, it has been brought to the attention of the editors that the article was intended for publication in the journal Laser Physics Letters, but was instead published in Laser Physics.

Prospective Materials for Photoconductive Antennas for Terahertz Generation

“…The main challenge for the development of InGaAsbased photoconductors is smaller band gap which results in larger dark background conductivity and lower breakdown field strength. Kirill Kuznetsov et al [19] have reported the Hall effects measurements on spiral antenna topology PCA with InGaAs heterostructures using van der pauw method (Table 1). The electron sheet concentration and mobility depends upon the heterostructure design and the substrate orientation.…”