Photoconducting and photocapacitance properties of Al/p-CuNiO2-on-p-Si isotype heterojunction photodiode

Elsayed, Islam; Çavaş, Mehmet; Gupta, Ram K.; Fahmy, T.; Al-Ghamdi, Ahmed A.; Yakuphanoğlu, F.

doi:10.1016/j.jallcom.2015.02.212

Cited by 16 publications

(19 citation statements)

References 25 publications

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“…Thus, by exploiting the properties of the nanostructured materials, it is possible to produce various electronic circuit elements, such as photodiodes, photosensors, and phototransistors. [1,4,5]. Various techniques have been used to produce nanostructured thin films, [6,7] including DC magnetron sputtering pulsed laser deposition, sol-gel spin coating technique, spray pyrolysis, radio frequency sputtering, and chemical bath deposition.…”

Section: Introductionmentioning

confidence: 99%

“…Various techniques have been used to produce nanostructured thin films, [6,7] including DC magnetron sputtering pulsed laser deposition, sol-gel spin coating technique, spray pyrolysis, radio frequency sputtering, and chemical bath deposition. Among these, the sol-gel spin coating technique has many advantages over the others [4]. The sol-gel spin coating technique is widely used to fabricate uniform thin films on various substrates.…”

Section: Introductionmentioning

confidence: 99%

“…NiO has a wide band gap (E g ) that is between 3.6-4 eV and exhibits low p-type conductivity and transparency under visible light [1,4,5]. The conductivity mechanism of NiO is mainly determined by holes generated from nickel *Corresponding author, E-mail: mcavas23@hotmail.com vacancies, oxygen interstitial atoms, and the dopant materials ratio [4,5]. Therefore, the resistivity of NiObased nanostructured thin films can be changed by using different material doping ratios, such as Al, ZnO, and CdO [1-3, 5, 8, 9].…”

Section: Introductionmentioning

confidence: 99%

“…Many researchers have investigated the effect of NiO doping ratio on structural and morphological properties of ZnO and CdO. In this way, the electrical and optical properties of the doped NiO thin films can be modified and improved [1,4,5,10,11]. Therefore, here we generated a Li-doped NiO nanostructure thin film and investigated its optical and electrical properties.…”

Section: Introductionmentioning

confidence: 99%

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Improving the optical and electrical properties of NiO/n-Si photodiode by Li dopant

Çavaş

2018

Indian J Phys

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In this study, Li-doped NiO solution was produced using a sol-gel spin coating technique. The manufactured solution was deposited onto the n-Si substrate to obtain a homogeneous thin film that could be used for photodiode production. Next, we measured the morphological, electrical, and optical parameters of the manufactured photodiode. First, the morphological properties of the thin film were studied by atomic force microscopy (AFM). Using AFM analysis software, the roughness and grain size of the thin film were estimated as 8.2-10 and 227-239 nm respectively. The optical transparency and the band gap of the Li-doped NiO thin film were studied. The optical measurements of the thin film were taken using a Shimadzu UV-Vis-NIR 3600 spectrophotometer. The transmittance of the thin film was 83.6%, and the band gap was 3.57 eV. The current-voltage (I-V) characteristic of the photodiode was measured in the dark and under various intensities of illumination. We found that the current of the photodiode changed depending on the intensity of illumination. As the intensity of illumination increased, the current also increased, from 6.3 9 10 -7 to 3.36 9 10 -4 A. These data indicate that the photodiode is sensitive to illumination intensity and, therefore, could be used as an optical sensor. The barrier height and ideality factor of the photodiode were also determined using the thermionic emission model. The barrier height and ideality factor of the Al/n-Si/LiNiO/Au photodiode were 0.81 eV and 3.7 respectively. Also, the capacitancevoltage (C-V), the interface density (D it ), and the serial resistance of the photodiode were found to change with changing frequency. Taken together, these data show that the Li doping ratio improved the optical and electrical properties of NiO. Based on these findings, we propose that Li-doped NiO could be incorporated into optoelectronic devices, such as photodiodes and photosensors.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Improving the optical and electrical properties of NiO/n-Si photodiode by Li dopant

Çavaş

2018

Indian J Phys

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“…Delafossites are a promising class of materials which have applications as transparent semiconducting oxides, catalysts, luminescent materials, p-type semiconductors used in solar cells, optoelectronic devices, transparent photodiodes, batteries [1][2][3][4][5][6][7], etc. Even though much work has been carried out on the cuprate family of delafossites, especially about CuFeO 2 [8], little is known about the structural, electronic and magnetic properties of its silver counterpart AgFeO 2 .…”

Section: Introductionmentioning

confidence: 99%

Synthesis and characterization of AgFeO₂ delafossite with non-stoichiometric silver concentration

et al. 2017

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Abstract. The simple co-precipitation method was used to prepare Ag x FeO 2 delafossite with non-stoichiometric silver concentration in the range of x = 0.05-1. The obtained material was investigated using X-ray powder diffraction and 57Fe Mössbauer spectroscopy at room temperature. The structural and hyperfi ne interaction parameters were recognized in relation with decreasing silver concentration. The study revealed that the delafossite structure of Ag x FeO 2 was maintained up to x = 0.9; as the range of silver concentration was decreased to 0.05  x  0.8, a mixture of AgFeO 2 , Fe 2 O 3 or/and FeOOH was formed.

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Photoresponse and photocapacitor properties of Au/AZO/p-Si/Al diode with AZO film prepared by pulsed laser deposition (PLD) method

et al. 2016

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Photoconducting and photocapacitance properties of Al/p-CuNiO2-on-p-Si isotype heterojunction photodiode

Cited by 16 publications

References 25 publications

Improving the optical and electrical properties of NiO/n-Si photodiode by Li dopant

Improving the optical and electrical properties of NiO/n-Si photodiode by Li dopant

Synthesis and characterization of AgFeO₂ delafossite with non-stoichiometric silver concentration

Photoresponse and photocapacitor properties of Au/AZO/p-Si/Al diode with AZO film prepared by pulsed laser deposition (PLD) method

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Photoconducting and photocapacitance properties of Al/p-CuNiO2-on-p-Si isotype heterojunction photodiode

Cited by 16 publications

References 25 publications

Improving the optical and electrical properties of NiO/n-Si photodiode by Li dopant

Improving the optical and electrical properties of NiO/n-Si photodiode by Li dopant

Synthesis and characterization of AgFeO2 delafossite with non-stoichiometric silver concentration

Photoresponse and photocapacitor properties of Au/AZO/p-Si/Al diode with AZO film prepared by pulsed laser deposition (PLD) method

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Synthesis and characterization of AgFeO₂ delafossite with non-stoichiometric silver concentration