The following work gives a discussion on hydrogenated amorphous silicon (a‐Si:H) film preparation by laser induced chemical vapor deposition (LICVD) using a pulsed CO2‐laser in a parallel configuration. Deposition rate and initiation of polymerization were studied as a function of total pressure, gas flow, gas mixture (buffer gas, silane and/or disilane), substrate temperature, and radiation flux. The results lead to a reaction model where higher silane homologues play an important role for the film production. The film properties strongly depend on the substrate temperature Ts. The activation energy Ea of the dark conductivity decreases from 1.1 eV to 0.7 eV for films prepared at Ts = 230°C to 450°C. In the same temperature range, the dark conductivity σd increases from ∼10−14 to ∼10−10 (Ω cm)−1, whereas the photo conductivity σph shows a maximum of ∼10−6 (Ω cm)−1 at Ts = 320‐330°C. These values, especially their temperature behaviour, are compared with the results of other CO2‐LICVD works and further production methods. It is shown that the film formation depends on the gas phase chemistry as well as on the substrate temperature.