Photoassisted interfacial charge transfers at inhomogeneous semiconducting film-electrolyte junction in photoelectrochemical cells

Microgravimetric, rotating ring-disc and voltammetric studies of the underpotential deposition of selenium on polycrystalline platinum electrodes

“…The extensive grain boundary networks in such polycrystalline materials increase their resistivity and provide recombination centres, and are thus detrimental to most applications [15]. The upd layers have been proposed for the generation of epitaxial growth [2,3,16], with the formation of one atomic layer at a time and by overlaying the first Se layer with a Cd or Zn one, followed by another Se layer and so on.…”

In-Situ STM Study of Te UPD Layers on Low Index Planes of Gold

“…A major thrust of recent research has been dedicated to studying their formation by cathodic electrodeposition from aqueous solutions − as this method provides an attractive, low cost, ambient temperature approach to the fabrication of these devices. Most of the previous Cd/Te electrodeposition studies, however, have resulted in amorphous and polycrystalline deposits with extensive grain boundaries leading to an increased resistivity of these materials . Long-range order through epitaxy and the creation of sharp phase boundaries, are hence particularly important goals.…”

“…Most of the previous Cd/Te electrodeposition studies, however, have resulted in amorphous and polycrystalline deposits with extensive grain boundaries leading to an increased resistivity of these materials. 21 Long-range order through epitaxy and the creation of sharp phase boundaries, are hence particularly important goals. Recently Stickney and co-workers have developed a new technique for the preparation of compound semiconductors, which they refer to as electrochemical atomic layer epitaxy (ECALE).…”

In Situ STM Study of CdTe ECALE Bilayers on Gold

“…19,22 Only a limited number of compound semiconductors have been successfully grown in an epitaxial phase, such as the nanocrystalline phase of CdSe on Au, 23 and in the case of CdTe Stranski-Krastenov growth results in "cauliflower" amorphous or polycrystalline deposits 24 unsuitable for commercial applications in electronic devices. 25 The reasons for the difficulties in achieving epitaxial growth have been considered in detail and led to the development of the technique of electrochemical atomic layer epitaxy (ECALE). 24 ECALE is the electrochemical analogue of ALE, using the potential (rather than temperature) to restrict deposition of constituent elements through underpotential deposition (UPD), and a variety of compound semiconductors have been successfully prepared by this technique.…”

“…Cathodic electrodeposition of CdTe from aqueous solution pioneered by Panicker et al provides a low-cost room-temperature and large-scale production alternative to the vacuum-based techniques. − Although there has been considerable debate in the literature concerning the reaction mechanism, it appears that a competition with specific reaction sites at the surface is important in the growth of stoichiometric films. , Only a limited number of compound semiconductors have been successfully grown in an epitaxial phase, such as the nanocrystalline phase of CdSe on Au, and in the case of CdTe Stranski−Krastenov growth results in “cauliflower” amorphous or polycrystalline deposits unsuitable for commercial applications in electronic devices . The reasons for the difficulties in achieving epitaxial growth have been considered in detail and led to the development of the technique of electrochemical atomic layer epitaxy (ECALE) .…”