Photoassisted generation of ferroelectric domain gratings in SBN

Kahmann, F.; Pankrath, R.; Rupp, R. A.

doi:10.1016/0030-4018(94)90094-9

Cited by 39 publications

(12 citation statements)

References 11 publications

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“…SBN has become a very promising material for technological applications and basic research in the light of its outstanding properties. The applications include pyroelectric detectors, 2,3 holographic data storage systems, 4–8 phase conjugation, 9 generation of photorefractive solitons, 10 quasi‐phase‐matched second‐harmonic generation, 11,12 and electric‐optic modulation 13–21 …”

Section: Introductionmentioning

confidence: 99%

Defects, Structure Changes, and the Effect of Random Fields on the Displacement of Off‐Center Ions in Sr_0.5Ba_0.5Nb₂O₆ Doped with Combinations of Ce and Cr

Fang

Chung

Lee

2010

Journal of the American Ceramic Society

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Synchrotron X‐ray powder diffraction data are analyzed in detail by the Rietveld structure refinement program to obtain microscopic structure changes of Sr0.5Ba0.5Nb2O6 (SBN50) doped with combinations of Ce and Cr. The defects of Ce and (Ce,Cr)‐doped SBN50 are determined by the densification behavior, and it is found that creation of Nb vacancies and self‐compensation are the defect reactions for Ce and (Ce, Cr) dopants, respectively. The variations of the lattice parameters of a and c axes with doping content are determined by the changes of the distance between A1 and A2 sites via Coulomb interactions and the mean bond length of Nb(1)–O(4), respectively. It is confirmed that the polarization of SBN50 is mainly determined by the displacement of Nb ions. The effect of random fields induced by the impurities of the combinations of Ce and Cr on the displacement of off‐center Nb ions has been reasonably explained.

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Section: Introductionmentioning

confidence: 99%

Defects, Structure Changes, and the Effect of Random Fields on the Displacement of Off‐Center Ions in Sr_0.5Ba_0.5Nb₂O₆ Doped with Combinations of Ce and Cr

Fang

Chung

Lee

2010

Journal of the American Ceramic Society

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“…1 Also, the structure possesses not only a partially distorted distribution of Sr and Ba cations but also half occupied O͑4͒ and O͑5͒ sites, 2 which probably leads to the important ferroelectric properties and the not well understood relaxor-type phase transition. [4][5][6][7][8][9][10][11] Recently, the possibility to use a periodically poled SBN for second-harmonic generation, 12 a technique which elegantly circumvents the need to satisfy a phase-matching condition, has further stimulated research in this field. [4][5][6][7][8][9][10][11] Recently, the possibility to use a periodically poled SBN for second-harmonic generation, 12 a technique which elegantly circumvents the need to satisfy a phase-matching condition, has further stimulated research in this field.…”

Section: Introductionmentioning

confidence: 99%

The defect structure, sintering behavior, and dielectric responses of Cr2O3-doped Sr0.5Ba0.5Nb2O6

Fang

Chen

2006

Journal of Applied Physics

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Phase structure, dielectric properties, and relaxor behavior of ( K 0.5 Na 0.5 ) NbO 3 -( Ba 0.5 Sr 0.5 ) TiO 3 lead-free solid solution for high temperature applications Effect of sintering temperature on the phase transition and dielectrical response in the relaxor-ferroelectricsystem 0.5PZN-0.5PZT Sr 0.5 Ba 0.5 Nb 2 O 6 ͑SBN50͒ with and without Cr 2 O 3 dopant had been prepared by the solid-state reaction. The structural variations of undoped and Cr 2 O 3 -doped SBN were examined by the x-ray diffractometer. As the Cr 2 O 3 content increases, the lattice parameters remain almost unchanged initially but become greatly changed revealing the increase in a axis and the decrease in c axis when the Cr 2 O 3 content is Ͼ1 mol %, which was mainly influenced by the created oxygen vacancies. Isothermal sintering behavior of undoped and Cr 2 O 3 -doped SBN50 has been investigated. It was found that the creation of the charge-compensated oxygen vacancies and the accompanied structural change had a significant influence on the sintering behavior. The direct jumping path through vacant O sites ͑path 2 in Fig. 9͒ was further considered as the main reason for the enhancement of the densification rate and slight increase of the activation energy when the Cr 2 O 3 content is Ϲ1 mol % and the decrease of the densification rate but great increase of the activation energy when the Cr 2 O 3 content is Ͼ1 mol %. T max ͓temperature at the maximum dielectric constant ͑ max ͔͒ decreased with the increase of Cr doping and is essentially determined by the structural change of the NbO 6 units in SBN. max is suggested to be determined by the competition between the reduction of the polarization due to the substitution of Cr for Nb and the enhancement of the polar moment arising from the weakening of Nb-O bonds due to the creation of the oxygen vacancies.

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“…However light influence on the crystals was observed to be able to affect the domain structure [3][4][5] .…”

Section: Introductionmentioning

confidence: 99%

<title>Photoinduced domain origin in lithium niobate crystals</title>

Lemeshko

Obukhovsky

1996

SPIE Proceedings

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Light influence on LiNbO 3 : Fe crystals has been found to induce appearance of needlelike microdomains with average length of 1-2 mm and diameter of 1 µ . Light scattering by photoinduced microdomain array has been investigated and found to be a seeding source of polarizationally anisotropic photorefractive light scattering. The effect of unlocality of forming the microdomains has been revealed. Photoinduced charge redistribution at the crystal surface has been found to cause the domain formation and rebuilding the crystal structure.

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Photoassisted generation of ferroelectric domain gratings in SBN

Cited by 39 publications

References 11 publications

Defects, Structure Changes, and the Effect of Random Fields on the Displacement of Off‐Center Ions in Sr_0.5Ba_0.5Nb₂O₆ Doped with Combinations of Ce and Cr

Defects, Structure Changes, and the Effect of Random Fields on the Displacement of Off‐Center Ions in Sr_0.5Ba_0.5Nb₂O₆ Doped with Combinations of Ce and Cr

The defect structure, sintering behavior, and dielectric responses of Cr2O3-doped Sr0.5Ba0.5Nb2O6

<title>Photoinduced domain origin in lithium niobate crystals</title>

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Photoassisted generation of ferroelectric domain gratings in SBN

Cited by 39 publications

References 11 publications

Defects, Structure Changes, and the Effect of Random Fields on the Displacement of Off‐Center Ions in Sr0.5Ba0.5Nb2O6 Doped with Combinations of Ce and Cr

Defects, Structure Changes, and the Effect of Random Fields on the Displacement of Off‐Center Ions in Sr0.5Ba0.5Nb2O6 Doped with Combinations of Ce and Cr

The defect structure, sintering behavior, and dielectric responses of Cr2O3-doped Sr0.5Ba0.5Nb2O6

<title>Photoinduced domain origin in lithium niobate crystals</title>

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Defects, Structure Changes, and the Effect of Random Fields on the Displacement of Off‐Center Ions in Sr_0.5Ba_0.5Nb₂O₆ Doped with Combinations of Ce and Cr

Defects, Structure Changes, and the Effect of Random Fields on the Displacement of Off‐Center Ions in Sr_0.5Ba_0.5Nb₂O₆ Doped with Combinations of Ce and Cr