Photoacoustic investigations of beryllium containing wide gap II–VI mixed crystals

Properties of MBE-Grown ZnBeSe: Study of Be Isoelectronic Traps and of Dopant Behavior

“…[15,16] pertain to bulk crystals, for our comparison we shall use only data from Refs. [15,16] pertain to bulk crystals, for our comparison we shall use only data from Refs.…”

“…Since the Be atom is substantially smaller than Zn, it is quite probable that Be will introduce a short-range potential which would lead to the formation of an isoelectronic trap [13]. [15] or the excitonic bandgap, e.g. there is formation of an isoelectronic donor.…”

“…Figure 2 shows PL data from three typical ZnBeSe : Cl samples. [15] the bandgap values were obtained at room temperature via absorption experiments and have only four data-points. It is interesting to compare the peak positions of the bound excitonic line with reported ZnBeSe bandgap values.…”

“…There are several reports on the dependence of the ZnBeSe direct bandgap, e.g. [15] or the excitonic bandgap, e.g. [6,12,16] on Be concentration.…”

Determination of the thermophysical parameters of Zn1–xBexSe mixed crystals by means of photothermal techniques

“…Photoacoustic measurements were carried out using an open cell presented elsewhere [5]. He-Cd laser (λ = 325 nm) was used as excitation source for thermal diffusivity estimations.…”