2014
DOI: 10.1063/1.4890346
|View full text |Cite
|
Sign up to set email alerts
|

Photoacoustic elastic bending in thin film–substrate system: Experimental determination of the thin film parameters

Abstract: The aim of this work is the development of photoacoustic (PA) method for the measurement and determination of parametres of thin films (with a thickness of less than 1 μm). Experimental study of the optical, thermal, and elastic characteristics of the thin film on Si substrate by PA elastic bending method was given. Thin film–semiconductor (Si) sample is modeled by simultaneous analysis of the plasma, thermal, and elastic wave equations. Two normalization procedures of the PA elastic bending signal in function… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1
1

Citation Types

1
26
0

Year Published

2014
2014
2024
2024

Publication Types

Select...
8
1

Relationship

1
8

Authors

Journals

citations
Cited by 24 publications
(27 citation statements)
references
References 39 publications
1
26
0
Order By: Relevance
“…All plates were prepared from the same non-degenerated n-type Si wafer (3-5 Ω cm, ⟨100⟩ oriented) having the electron concentration of n 0 ¼ 9 Â 10 20 m À3 . 29 The samples thus obtained were excited with a laser diode emitting light at 656 nm with an intensity of I 0 = 10 W/m 2 and photon energy ε greater than the Si bandgap ε g . The absorption coefficient of our Si samples at the diode wavelength is β ¼ 2:58 Â 10 5 m À1 .…”
Section: Methodsmentioning
confidence: 99%
“…All plates were prepared from the same non-degenerated n-type Si wafer (3-5 Ω cm, ⟨100⟩ oriented) having the electron concentration of n 0 ¼ 9 Â 10 20 m À3 . 29 The samples thus obtained were excited with a laser diode emitting light at 656 nm with an intensity of I 0 = 10 W/m 2 and photon energy ε greater than the Si bandgap ε g . The absorption coefficient of our Si samples at the diode wavelength is β ¼ 2:58 Â 10 5 m À1 .…”
Section: Methodsmentioning
confidence: 99%
“…The detection of the acoustic signal coming from a sample illuminated by the modulated radiation Perondi and Miranda, 1987;Vargas and Miranda, 1988) represents the basis of all open-cell photoacoustic (PA) measurements. The signal amplitude and phase changes are monitored in the modulation frequency domain of 20 Hz to 20 kHz (Rabasović et al, 2009;Todorović et al, 2014).…”
Section: Introductionmentioning
confidence: 99%
“…Resonant peaks observed in this part of frequency domain are, throughout literature, attributed to the influence of measurement chain, although, in measurements, they occur at frequencies lower than expected (frequency characteristic of the microphone, the amplifier, and other electronics) [27][28][29]. Minimum volume cell has already been observed as an electro-acoustic resonator and it has been modeled with cascade filter array, with transfer function represented as the combination of two Helmholtz resonators:…”
Section: Helmholtz Resonances-the Influence Of the Measurement Chainmentioning
confidence: 99%