2023
DOI: 10.3390/ma16072865
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Photoacoustic Characterization of TiO2 Thin-Films Deposited on Silicon Substrate Using Neural Networks

Abstract: In this paper, the possibility of determining the thermal, elastic and geometric characteristics of a thin TiO2 film deposited on a silicon substrate, with a thickness of 30 μm, in the frequency range of 20 to 20 kHz with neural networks were analysed. For this purpose, the geometric (thickness), thermal (thermal diffusivity, coefficient of linear expansion) and electronic parameters of substrates were known and constant in the two-layer model, while the following nano-layer thin-film parameters were changed: … Show more

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Cited by 3 publications
(1 citation statement)
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“…In this paper, in order to further reduce the resistivity of the Al 2 O 3 ceramic, on the basis of the previous research on Cr 2 O 3 and MnO 2 -doped Al 2 O 3 ceramics, we chose TiO 2 , with semiconductor properties, as an additive, and studied the effect of the TiO 2 addition on the performance of the Al 2 O 3 ceramics. TiO 2 has low resistivity, but few studies have been reported on the effects of TiO 2 on the resistivity and voltage holdoff capacity of Al 2 O 3 ceramics, since the valence of Ti changes in different compounds and its mechanism of action in materials is complicated [ 23 , 24 ]. On the basis of Cr/Mn-doped Al 2 O 3 ceramics, we fixed Cr 2 O 3 :MnO 2 = 1:1 (mass ratio) in this paper and studied the effects of the additional amount of TiO 2 on the microstructure, phase composition, secondary electron emission characteristics, resistivity, and surface flash properties of the Al 2 O 3 ceramic in a vacuum.…”
Section: Introductionmentioning
confidence: 99%
“…In this paper, in order to further reduce the resistivity of the Al 2 O 3 ceramic, on the basis of the previous research on Cr 2 O 3 and MnO 2 -doped Al 2 O 3 ceramics, we chose TiO 2 , with semiconductor properties, as an additive, and studied the effect of the TiO 2 addition on the performance of the Al 2 O 3 ceramics. TiO 2 has low resistivity, but few studies have been reported on the effects of TiO 2 on the resistivity and voltage holdoff capacity of Al 2 O 3 ceramics, since the valence of Ti changes in different compounds and its mechanism of action in materials is complicated [ 23 , 24 ]. On the basis of Cr/Mn-doped Al 2 O 3 ceramics, we fixed Cr 2 O 3 :MnO 2 = 1:1 (mass ratio) in this paper and studied the effects of the additional amount of TiO 2 on the microstructure, phase composition, secondary electron emission characteristics, resistivity, and surface flash properties of the Al 2 O 3 ceramic in a vacuum.…”
Section: Introductionmentioning
confidence: 99%