Photo-voltage in InGaAs/GaAs heterostructures with one-dimensional nanostructures

Abstract

Materials with one-dimensional quantum structures are promising for their application in solar cells. The photo-voltage generation of these structures is caused by spatial separation of electron-hole pairs by a built-in electric field in the GaAs p-i-n junction. The InGaAs/GaAs sample shows a significantly higher photo-voltage in the spectral range of 1.25-1.37 eV, as compared to a reference GaAs p-n junction, due to interband transitions in the quantum wires (QWRs).