Photo-Structural Transformations in Amorphous Chalcogenide Glassy Semiconductor Films

Prikhodko, O. Yu.; Almasov, N.; Korobova, N.; Duysembaev, S.; Turmanova, K. N.; Tséndin, K. D.

doi:10.18321/ectj56

Cited by 2 publications

(3 citation statements)

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“…These experimental facts suggest that As 40 Se 30 S 30 RF films have bipolar drift of charge carriers. Experimentally observed field dependence on the conductivity and drift mobility can be interpreted in a model of charged defects [1,5]. In the model of charged defects, the charge carriers drift mobility is limited by trapping at charged centers D + and D -.…”

Section: Resultsmentioning

confidence: 99%

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Structure and electronic properties features of amorphous chalhogenide semiconductor films prepared by ion-plasma spraying

Korobova¹,

Almasov²,

Prikhodko³

et al. 2014

AIP Conference Proceedings

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Abstract. Structure of amorphous chalcogenide semiconductor glassy As-S-Se films, obtained by high-frequency (HF) ion-plasma sputtering has been investigated. It was shown that the length of the atomic structure medium order and local structure were different from the films obtained by thermal vacuum evaporation. Temperature dependence of dark conductivity, as well as the dependence of the spectral transmittance has been studied. Conductivity value was determined at room temperature. Energy activation conductivity and films optical band gap have been calculated. Temperature and field dependence of the drift mobility of charge carriers in the HF As-S-Se films have been shown. Bipolarity of charge carriers drift mobility has been confirmed. Absence of deep traps for electrons in the As 40 Se 30 S 30 spectrum of localized states for films obtained by HF plasma ion sputtering was determined. Bipolar drift of charge carriers was found in amorphous As 40 Se 30 S 30 films obtained by ion-plasma sputtering of high-frequency, unlike the films of these materials obtained by thermal evaporation.

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Section: Resultsmentioning

confidence: 99%

“…Application of chalcogenide glassy semiconductors (CGS) now was found in many devices of micro -nano -and optoelectronics [1][2]. The unique properties of chalcogenide semiconductors allow apparently soon finding new areas of application [3].…”

Section: Introductionmentioning

confidence: 99%

Structure and electronic properties features of amorphous chalhogenide semiconductor films prepared by ion-plasma spraying

Korobova¹,

Almasov²,

Prikhodko³

et al. 2014

AIP Conference Proceedings

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“…In some technological and performance aspects, SmS pressure sensors are also advantageous over sensors based on compound semiconductors (K = 50-100) and single-crystal silicon (K = 100-135) [9][10][11].…”

Section: Introductionmentioning

confidence: 99%

Chemistry and Technology of Samarium Monosulfide

Андреев

Иванов²,

Gorshkov³

et al. 2016

Eur Chem Tech J

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Samarium monosulfide SmS (Fm3m, а = 5.967 Å, ΔЕ = 0.23 V, n = 1020 cm–1, σ = 500 Ω–1 cm–1, α = 350 μВ/K) is a thermoelectric material (Z>1) and, at the same time, a pressure-sensitive material (K≥40–50). Samarium monosulfide is a daltonide phase with a solid solution whose extent is mostly in the range of cationic vacancies: Sm1+x S1-x□2x (x = 0–0.035; 1750 K). The congruent melting temperature of SmS is 2475 K. In the Sm–S system, Sm3S4 crystallizes from melt without change in composition. Samarium monosulfide thermally dissociates to Sm3S4 and Sm. Large-scale SmS lots are produced from samarium and sulfur. Synthesis is carried out in sealed-off silica glass ampoules at 500–1350 K followed by heat treatment in tantalum crucibles at 1500–2400 K. The reaction of metal samarium with sulfur results in the formation of sulfide phases that coat the samarium surface in the following order: SmS, Sm3S4, Sm2S3, and SmS2. Subsequent annealing at 1500–1800 K provides SmS yields up to 96–97 mol %. Equilibrium minor phases for SmS are Sm3S4, Sm2О2S, and Sm. X-ray amorphous SmS was prepared by reacting organic samarium compounds with sulfur or H2S. The samarium (+2) oxidation state determines the chemical specifics of SmS. 90–120 μm SmS powders are thermally hydrolyzed starting at 600 K with Н2 evolution and oxidize starting at 520 K to yield Sm3S4 and then Sm2О2S phases. A 90–120 μm SmS fraction for film deposition by flash evaporation is prepared by milling annealed SmS samples. Tablets 75 mm in diameter for use in magnetron sputtering are pressed from a <60-μm fraction.

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Photo-Structural Transformations in Amorphous Chalcogenide Glassy Semiconductor Films

Cited by 2 publications

References 1 publication

Structure and electronic properties features of amorphous chalhogenide semiconductor films prepared by ion-plasma spraying

Structure and electronic properties features of amorphous chalhogenide semiconductor films prepared by ion-plasma spraying

Chemistry and Technology of Samarium Monosulfide

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