Photo-strain induced magnetoresistance modulation in magnetoelectric heterostructure-based devices

Abstract

The electric-field control of magnetic dynamics and magnetization in magnetoelectric (ME) heterostructures holds promise for energy-efficient beyond-CMOS devices. However, such techniques entail a high-saturation operational electric field near the device breakdown voltage and introduce complexity due to the requirement for electrical contacts. This study circumvents this issue by light-induced magnetoresistance (MR) modulation in a Ni/PMN-PT ME heterostructure driven by photo-strain-induced internal electric field. Reduced MR, especially in the perpendicular mode, is observed, signifying a localized reduction in the external magnetic field required for magnetization alignment, as elucidated by Langevin function analysis. The proposed method could facilitate better integration and scalability of ME-based spintronic devices, paving the way for low-power beyond-CMOS technologies.