Photo-stability of pulsed laser deposited Ge_xAs_ySe_100-x-y amorphous thin films

Abstract

Quest for photo-stable amorphous thin films in ternary Ge(x)As(y)Se(100-x-y) chalcogenide system is reported. Studied layers were fabricated using pulsed laser deposition technique. Scanning electron microscope with energy dispersive X-ray analyzer, Raman scattering spectroscopy, transmittance measurements, variable angle spectroscopic ellipsometry, and non-linear imaging technique with phase object inside the 4f imaging system were employed to characterize prepared thin films. Their photo-stability/photo-induced phenomena in as-deposited and relaxed states were also investigated, respectively. In linear regime, we found intrinsically photo-stable relaxed layers within Ge(20)As(20)Se(60) composition. This composition presents also the highest optical damage threshold under non-linear optical conditions.

Laser Desorption Ionization Time‐of‐Flight Mass Spectrometry of Glasses and Amorphous Films from Ge–As–Se System

“…17 For the fabrication of thin films, UV PLD was employed using 25 mm targets made from above described bulk glasses, PLD setup consisting of a KrF excimer laser (248 nm, 300±3 mJ per pulse, 30 ns pulse duration, 20 Hz repetition rate), and a vacuum chamber (background pressure <3x10 -4 Pa). The substrates used for PLD (chemically cleaned microscope glass slides, Si wafers) were positioned parallel to the target surface at the target to substrate distance of 5 cm.…”

“…Physical properties of bulk Ge-As-Se glasses were heavily reported: linear and nonlinear optical properties, [7][8][9][10][11] structure, 8,9,12 photoinduced processes, 13 etc. Fabrication and characterization of amorphous Ge-As-Se thin films was subject of deep research in last decade; pulsed laser deposition (PLD), [14][15][16][17][18] thermal evaporation 6,14,[19][20][21][22] or radio-frequency magnetron sputtering 23 were shown to be suitable deposition techniques; each of them possessing its own advantages and disadvantages. PLD technique seems to be promising according to its easy control of the deposition process, possibility to fabricate multilayered structures and often stoichiometric material transfer from the target to the films.…”

Surface patterning in Ge Se amorphous layers

“…The highest surface patterns were observed for the Ge 24 Se 76 and Ge 28 Se 72 films. In detail, the modulation depth of the created holographic gratings reaches about 320 nm for annealed Ge 24 Se 76 composition, i.e.…”

“…Pulsed laser deposition (PLD) was used earlier to create chalcogenide based single and multilayer nano-structures [21][22][23]. We already reported PLD as a thin film/multilayered structure fabrication technique viable for the Ge-based amorphous chalcogenides, because of the easy control of the process and often stoichiometric transfer of target material to the films [23][24][25]. In this work we used both TE and PLD methods for the preparation of thin layers based on Ge-Se amorphous chalcogenides.…”

Pulsed laser deposited amorphous chalcogenide and alumino-silicate thin films and their multilayered structures for photonic applications

“…We already reported pulsed laser deposition (PLD) as a thin films fabrication technique viable for the amorphous chalcogenides as well as alumino-silicates being advantageous due to its simplicity, easy control of the process, often stoichiometric transfer of target material to the films, and possibility to fabricate multilayered structures [17][18][19][20]. However, the PLD has a drawback (compared to other deposition techniques such as thermal evaporation) of more difficult control in terms of deposition rate reproducibility; on the other hand it has the advantage of depositing luminescent layers.…”