Photo-leakage-current characteristic of F incorporated hydrogenated amorphous silicon thin film transistor

Abstract

The photo-leakage-current (IPLC) characteristic of F incorporated a-Si:H thin film transistor (TFT) has been studied. The device activation energy (Ea) of a-Si:H(:F) TFTs is higher than those of typical a-Si:H TFTs, and resulted in the shift down of Fermi level in a-Si:H(:F). Experimental results show that the IPLC of a-Si:H(:F) TFTs is smaller than that of conventional a-Si:H TFTs in the density of states limited region, stemmed from the higher recombination centers present in a-Si:H(:F) material. However, the higher IPLC is observed in the hole conduction region, resulted from the larger Ea in the a-Si:H(:F) TFTs.

Leakage Current Reduction Using 350-nm Ultra-Violet Irradiation in P-Channel Polycrystalline-Silicon Thin-Film Transistors

“…Recently, Wang et al suggested that the incorporation of fluorine and chlorine into the amorphous-Si (a-Si) suppresses the leakage current by increasing the acceptor-like density of states. Increasing the acceptor-like density of state is a novel method to reduce the GIDL current due to its Fermi energy level shift; however, the fluorine and chlorine incorporation can damage and contaminate the pure intrinsic Si channel [15].…”