Photo-Irresponsive Thin-Film Transistor with Mg_xZn_1-xO Channel

Abstract

zfi2 I I n comparison with a homogeneous universe, a clumpy universe p o s~e s s two types of effects on geometrical optics: 1. the convergence due to the gravititataonal-lens effects of the clumps; B. the divergence due to the less mass density outside the clumps. On the other hand, thermodynamic8 requires that the total effects are double offset. This give tu an effective method to judge the rationality of various calculations of the lensing effect in a clumpy universe. P.1CS number: 9880

Effects of Mg on the electrical characteristics and thermal stability of MgxZn1−xO thin film transistors

“…Ohtomo et al 9 studied the photoresponse of Mg x Zn 1−x O TFTs ͑x = 0, 0.1, and 0.3͒. The field effect mobility was found to decrease from 2.7 cm 2 / V s for ZnO to 0.8 cm 2 / V s for Mg 0.1 Zn 0.9 O although no obvious structure change was found from x-ray diffraction.…”

Structural Analysis of ZnO(:Al,Mg) Thin Films by X-ray Diffraction

“…ZnO thin films have been widely used as frontal electrode in solar cells, being an alternative to metallic grid contacts that introduce shadows and lower the cell performance ( et al, 2007). Transparent thin film transistors (TTFT) are also an active field for application of ZnO films (Ohtomo et al, 2006). Another advantage of ZnO is its capability of growing with different morphologies like nanorings, nanohelices, nanostrips, nanowires, etc.…”

Properties of gallium- and aluminum-doped bulk ZnO obtained from single-crystals grown by liquid phase epitaxy

“…Over the last 10 years, much attention has been paid to zinc oxide (ZnO), because it is regarded as one of the most promising materials for novel optoelectronic applications, including transparent transistors [1,2] and light emitting diodes (LEDs) [3,4]. Mainstream ZnO-related research focuses on the control of electric conductivity, for example, the development of the technology for efficient p-type doping [5].…”

“…Most of the recent investigations on doped ZnO have been carried out using thin film materials [9][10][11] because thin film deposition techniques are directly related to the fabrication processes for optoelectronic devices [1][2][3]12,13]; however, such studies use thin film materials, which pose some limitations and difficulties. For example, properties of ZnO thin films are strongly affected by the physical and chemical states at the film/substrate interface [14]; moreover, preparation of thin films at relatively low temperature results in non-equilibrium structures [8,15,16].…”