Novel design of a dual-band dipole antenna printed on an FR4 substrate to achieve diversity operation in the 2.4-GHz and 5.2-GHz bands for a WLAN access point has been proposed. A constructed prototype has also been successfully implemented, and two separate wide resonant modes covering the 2.4-GHz and 5.2-GHz WLAN bands have been obtained. In addition, the measured radiation patterns of the antenna's two operating ports are directional in two complementary half spaces, which make the WLAN access point capable of performing spatial diversity to combat the multipath interfering problem and enhance system performance. Optical control has been emphasized in microwave devices due to unique advantages such as fast response, immunity from EMI, high power handling, good isolation between controlling and controlled devices, and possibilities for monolithic integration with other devices [1]. Since the reporting of picosecond photoconductivity, various microwave devices using the photoconductivity effect have been developed. One simple application for the photoconductivity effect is the direct excitation of a gap on a semiconductor transmission line with a laser light. The transmission characteristics can be controlled with the generated free carriers; the ON and OFF states can be used for a switching device or an attenuator. Initially, picosecond switches using pulse laser sources were developed as very useful techniques [2]. Intensive research in this field led to the demonstration of various microwave devices using the photoconductivity effect. In recent years, CW-or quasi-CW mode optically controlled microwave devices have also been an area of growing interest for novel devices, such as optically reconfigurable antenna arrays [3,4]. However, adverse influences are observed in the CW-mode operations. The number of generated free carriers may not increase in proportion to the incident optical power in the very high power range. Thus, obtaining higher photoconductivity may not be possible even though the incident optical power is increased in CW-mode operation [5, 6]. In a very low duty pulse-mode OMS, the pulse duration is much shorter than the recombination rate, and the carrier recombination can be ignored in counting the number of optically generated free-carriers. Thus, a direct bandgap material such as GaAs, which has a very short recombination rate, can be effectively used to reduce switching speed. However, in the CW-mode operation, the number of optically generated free-carriers is directly related to the recombination rate of the substrate material. In the steady state, the number of optically generated free-carriers is given by [5]:
EXPERIMENTAL RESULTS FOR A CW-MODE OPTICALLY CONTROLLED MICROWAVE SWITCH ON A SILICON-BASED COPLANAR WAVEGUIDEwhere ␣ is the absorption coefficient, I() is light intensity, h is the photon energy to excite electrons, R is the surface reflectivity, S is the relative spectral response of the semiconductor material exhibiting a peak response at 0 , and is the recombination rate or ca...