Photo-induced negative differential resistance in a resistive switching memory device based on BiFeO3/ZnO heterojunctions

Zheng, Pingping; Sun, Bai; Chen, Yuanzheng; Elshekh, Hosameldeen; Tian, Yu; Mao, Shuangsuo; Zhu, Shouhui; Wang, Hongyan; Zhao, Yong; Yu, Zhishui

doi:10.1016/j.apmt.2018.11.007

Cited by 77 publications

(35 citation statements)

References 44 publications

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“…The experimental results indicate that the resistive switching property have a high association of the oxadiazole small molecule additives in polymer host. At initial stage, the charge carriers have no sufficient energy to overcome the charge injection barrier between PMMA molecules; the built-in electric field between the interface was formed [43][44][45], at the same time, the formation of built-in electric field will further hinder the injection of carriers. Thus, the FTO/PMMA/Ag device is on the high resistance state.…”

Section: Resultsmentioning

confidence: 99%

Triggering WORM/SRAM Memory Conversion by Composite Oxadiazole in Polymer Resistive Switching Device

Zhao

Liu

et al. 2019

Journal of Nanomaterials

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Electrical characterization indicates that the nonvolatile write once read many (WORM) times/volatile static random access memory (SRAM) conversion was triggered by the composite of the oxadiazole small molecule. FTO/PMMA/Ag device possesses nonvolatile WORM memory behavior, while the FTO/PMMA+oxadiazole/Ag device shows vastly different volatile SRAM feature. The FTO/PMMA/Ag and FTO/PMMA+oxadiazole/Ag memory devices both exhibit high ON/OFF ratio nearly 104. The additive oxadiazole small molecule in the polymethyl methacrylate was suggested to form an internal electrode and serve as a channel during the charge transfer process, which is easy to both the charge transfer and back charge transfer, as a consequence, the WORM/SRAM conversion upon oxadiazole small molecule complexation was triggered. The results observed in this work manifest the significance of oxadiazole small molecule to the memory effects and will arouse the research interest about small molecule composite applied in memory devices.

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Section: Resultsmentioning

confidence: 99%

Triggering WORM/SRAM Memory Conversion by Composite Oxadiazole in Polymer Resistive Switching Device

Zhao

Liu

et al. 2019

Journal of Nanomaterials

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“…In the case of the Pt/In 2 O 3 /Au unit the curve slope is B0.94 at low voltages, indicating the formation of an Ohmic junction. 33 The slope value close to 1 is characteristic of Ohmic-like conductance (I p V), which is caused by the thermally generated free carriers ( Fig. S9a and c, ESI †).…”

Section: The Resistive Switching Mechanismmentioning

confidence: 99%

“…S9a and c, ESI †). 33 However, at higher applied voltages, the slope increases representing the characteristic of the space charge limited conduction (SCLC) mechanism. 33 The same behavior was observed in the conductance mechanism of Pt/TiO 2 -In 2 O 3 /Au and Pt/TiO 2 -In 2 O 3 (N 2 )/Au samples ( Fig.…”

Section: The Resistive Switching Mechanismmentioning

confidence: 99%

Heterostructured plasmonic memristors with tunable opto-synaptic functionalities

et al. 2021

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“…The present investigation focuses on ZnO nanoribbons (ZnO-NR) and their applications in nano-electronics, especially as N-doping is found to yield negative differential resistance (NDR) behavior at low bias. Experimental evidence of NDR has recently been reported on ZnO-based nano-devices 32,33 . Because of its essential role and applications in high-frequency oscillators, frequency multipliers and logical gates 34 , the understanding of the origins of NDR (i.e., reasons behind its appearance and its mechanisms) do deserve full investigation and are the scope of the present paper for the case of ZnO-NR:N based devices.…”

Section: Introductionmentioning

confidence: 98%

Origins of Negative Differential Resistance in N-doped ZnO Nano-ribbons: Ab-initio Investigation

Shaheen

Ali

Othman

et al. 2019

Sci Rep

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The electronic transport in low-dimensional materials is controlled by quantum coherence and non-equilibrium statistics. The scope of the present investigation is to search for the origins of negative-differential resistance (NDR) behavior in N-doped ultra-narrow zigzag-edge ZnO nano-ribbons (ZnO-NRs). A state-of-the-art technique, based on a combination of density-functional theory (DFT) and non-equilibrium Green’s function (NEGF) formalism, is employed to probe the electronic and transport properties. The effect of location of N dopant, with respect to the NR edges, on IV-curve and NDR is tested and three different positions for N-atom are considered: (i) at the oxygen-rich edge; (ii) at the center; and (iii) at the Zn-rich edge. The results show that both resistance and top-to-valley current ratio (TVCR) reduce when N-atom is displaced from O-rich edge to center to Zn-rich edge, respectively. After an analysis based on the calculations of transmission coefficient versus bias, band structures, and charge-density plots of HOMO/LUMO states, one is able to draw a conclusion about the origins of NDR. The unpaired electron of N dopant is causing the curdling/localization of wave-function, which in turn causes strong back-scattering and suppression of conductive channels. These effects manifest themselves in the drawback of electric current (or so called NDR). The relevance of NDR for applications in nano-electronic devices (e.g., switches, rectifiers, amplifiers, gas sensing) is further discussed.

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Photo-induced negative differential resistance in a resistive switching memory device based on BiFeO3/ZnO heterojunctions

Cited by 77 publications

References 44 publications

Triggering WORM/SRAM Memory Conversion by Composite Oxadiazole in Polymer Resistive Switching Device

Triggering WORM/SRAM Memory Conversion by Composite Oxadiazole in Polymer Resistive Switching Device

Heterostructured plasmonic memristors with tunable opto-synaptic functionalities

Origins of Negative Differential Resistance in N-doped ZnO Nano-ribbons: Ab-initio Investigation

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