Photo-induced modification of single-photon emitters in hexagonal boron nitride

Abstract

Interaction of a trapped charge with a point defectLet us consider a sheet of h-BN of thickness ݀ (see Fig. S1a); h-BN is a strongly anisotropic material with static dielectric constants ߝ // = 5.0 and ߝ ୄ = 7.0, respectively parallel and perpendicular to the sheet plane. For the sake of simplicity, let us take the value averaged over the three spatial directions: ߝ = 5.7. Let us place a point charge ‫ݍ‬ in the middle of the plane and let us calculate the electric field in the same mid-plane a distance ‫ݎ‬ away from the point charge. Due to symmetry, the electric field is radially symmetric. It can be found using the method of images, and it is given by (in atomic units) ‫ܨ‬ሺ‫ݎ‬ሻ = ‫ݍ‬ ‫ݎߝ‬ ଶ ൝1 + 2 ߛ ሾ1 + ሺ݀ ‫ݎ‬

Nanoassembly of quantum emitters in hexagonal boron nitride and gold nanospheres

“…SPEs in layered hBN are emerging sources with great potential for a variety of quantum applications due to their high brightness, long-term stability and full in-plane polarization. [10][11][12][13][14][15] It is therefore interesting to further study the enhancement of these SPEs via the Purcell effect. Achieving such an enhancement, however, requires maximal spectral overlap between the cavity resonance and the source emission as well as spatial positioning of the emitter in the maximum of the cavity electromagnetic field.…”