Photo-induced degradation of a-Si: H diodes with an nin structure

Pfleiderer, H.-J.; Kusian, W.; Krühler, W.

doi:10.1016/0038-1098(84)90671-9

Cited by 31 publications

(3 citation statements)

References 13 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The plasma enhanced chemical-vapor-deposition (PECVD) method is employed due to its advantage of generating uniform films over a large scale substrate [3]. Nonetheless, the indispensable high-rate deposition process for the reduction of manufacturing costs poses a serious problem in the actualization of a-Si:H films, namely photo-induced degradation (PID) [4,5]. PID will contribute to a serious deterioration of photoelectric performance, especially the conversion efficiency of a-Si:H based thin films [6,7].…”

Section: Introductionmentioning

confidence: 99%

Control of higher-silane generation by dilution gases in SiH₄ plasmas

Zhang

2020

Plasma Sources Sci. Technol.

View full text Add to dashboard Cite

Higher-silane related reactive species (HSRS) is considered as a key factor in increasing the degree of photo-induced degradation, which is a serious problem for hydrogenated amorphous silicon (a-Si:H) film. Dilution gases (H2, He, Ar) are used to control the generation of HSRS. A global model for SiH4-containing discharge is developed to investigate the concentration of HSRS. The model calculations are compared with the available measurements, presenting a reasonable agreement. Increasing pressure contributes to more power loss via volumetric processes, which brings about the decline in the electron density and temperature with the same absorbed power. The average electronegativity rises with the silane content or pressure log-linearly, but decreases with the power log-linearly. As the main precursor of the anion formation, S i H 3 − is the starting point for the formation of large silyl anions ( S i n H 2 n + 1 − ). The HSRS density rises first and then falls with the increase of the absorbed power, which can be explained by the decomposition of SiH4. The dilution of H2 promotes the generation of H atomics, enhancing the production of SiH2 with abstraction reaction (H + SiH3 ⇒ H2 + SiH2). However, due to the declined content of SiH4, the insertion reaction (SiH2 + SiH4 ⇒ Si2H6) is inhibited. A higher Ar fraction results in more total ionization and a larger ion density. Due to the high threshold energies of He for both excitation and ionization, the dilution of He does not contribute much to the variation of the neutral radical density.

show abstract

Section: Introductionmentioning

confidence: 99%

Control of higher-silane generation by dilution gases in SiH₄ plasmas

Zhang

2020

Plasma Sources Sci. Technol.

View full text Add to dashboard Cite

show abstract

“…A considerably reduced resistance of the a-Si:H layers by up to a factor of two was found due to the manufacturing conditions of the module [10]. Finally, the partial discharge was measured up to 10 kV in steps of 500 V. A considerable reduction of the partial discharge was observed compared to standard modules (Fig.…”

Section: Partial Discharge Of Modules With A-si:h Coated Substratesmentioning

confidence: 98%

IGBT module technology with high partial discharge resistance

Mitic

Licht²,

Lefranc³

Conference Record of the 2001 IEEE Industry Applications Conference. 36th IAS Annual Meeting (Cat. No.01CH37248)

View full text Add to dashboard Cite

The high operating voltages of 6.5 kV-IGBT modules place additional demands on the insulation and partial-discharge resistance. The most important component affected here is the metallized aluminum nitride ceramic which is embedded in a silicone gel. A high electric field strength can cause a local electric discharge in the silicone gel known as partial discharge, leading ultimately to electric insulation failure and reducing the reliability of the IGBT module. For a 6.5 kV IGBT module, the insulation test must be performed up to a voltage of 10.5 kV rms. Technological steps have been carried out to reduce the maximum electric field strength along the edge of the copper metallization. The edge of the ceramic was coated with a high-impedance layer of doped amorphous silicon. The electric current along the edge of the ceramic homogenizes the electric field strength. The partial discharge was determined up to 11 kV and a considerable reduction was observed compared to standard modules. Without an a-Si:H coating, the partial discharge already increases strongly at low voltages of 3-4 kV. At high voltages, the interface between the silicone gel and the substrate is a major source of partial discharge. The aSi:H coating reduces electric field peaks and the partial discharge does not exceed 10 pC up to a voltage of 10 kV.

show abstract

“…Excess defect concentration in a-Si:H can also be created by charge injection [den Boer et al 1984, Pfleiderer et al 1984, or by bombardment with keV electrons [Wagner et al 1987]. In all cases, the state of the sample after degradation is metastable, and state A of minimum defect density is achieved after annealing at sufficiently high temperature.…”

Section: Introductionmentioning

confidence: 99%

Δημιουργία και ιδιότητες των μετασταθών ατελειών στο άμορφο υδρογονωμένο πυρίτιο: μελέτη με ισχυρό παλμικό Laser

Κοπιδάκης¹

View full text Add to dashboard Cite

Photo-induced degradation of a-Si: H diodes with an nin structure

Cited by 31 publications

References 13 publications

Control of higher-silane generation by dilution gases in SiH₄ plasmas

Control of higher-silane generation by dilution gases in SiH₄ plasmas

IGBT module technology with high partial discharge resistance

Δημιουργία και ιδιότητες των μετασταθών ατελειών στο άμορφο υδρογονωμένο πυρίτιο: μελέτη με ισχυρό παλμικό Laser

Contact Info

Product

Resources

About

Photo-induced degradation of a-Si: H diodes with an nin structure

Cited by 31 publications

References 13 publications

Control of higher-silane generation by dilution gases in SiH4 plasmas

Control of higher-silane generation by dilution gases in SiH4 plasmas

IGBT module technology with high partial discharge resistance

Δημιουργία και ιδιότητες των μετασταθών ατελειών στο άμορφο υδρογονωμένο πυρίτιο: μελέτη με ισχυρό παλμικό Laser

Contact Info

Product

Resources

About

Control of higher-silane generation by dilution gases in SiH₄ plasmas

Control of higher-silane generation by dilution gases in SiH₄ plasmas