Abstract:Articles you may be interested inReactive ion etch-induced effects on 0.2 μm T-gate In0.52Al0.48As/In0.53Ga0.47As/InP high electron mobility transistors J.We studied the photo-Hall mobility and the photo-Hall density of modulation-doped field-effect transistor structures using either an InGaAs alloy channel or a short-period superlattice channel. In defining the short-period superlattice channel we changed the thicknesses of the InAs and GaAs layers and the number of InAs/GaAs interfaces. The thicknesses of th… Show more
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