Photo‐Field‐Emission from High‐Resistance Silicon and Germanium

Borzyak, P. G.; Yatsenko, A. F.; Miroshnichenko, L. S.

doi:10.1002/pssb.19660140218

Cited by 33 publications

(10 citation statements)

References 7 publications

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“…1. There can be distinctly traced three regions with characteristic changes of emission current (this result is similar to that obtained in [l], [2], and [7]). An essentially important fact is that saturation in region I1 is practically "absol~te".…”

Section: Saturation Region Of Field Current-voltage Characteristicssupporting

confidence: 88%

Field Emission from p‐Type Si

Fursey¹,

Егоров²

1969

Physica Status Solidi (b)

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The nonlinear field emission behaviour in dependence on temperature and light intensity was studied in p-type silicon crystals, whose surfaces were prepared by high-field evaporation in vacuo. The voltage drop along the emitter measured by the retarding potential technique and the size of the emission pattern were determined for every point of the Fowler-Nordheim plot. The curvature of the current-voltage curves for Si has more distinct character than it was observed earlier for Ge. The region of "absolute field emission saturation", which extends over a wide range of applied voltage variation was found in the Fowler-Nordheim plots. The emission cuFrent-voltage behaviour appreciably depends on sample history and especially on temperature treatments. Sample heating to 400 to 450 "C during bake-out fully distorts the field emission data in Si. Light and temperature produce the same effect on the field emission current.

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Section: Saturation Region Of Field Current-voltage Characteristicssupporting

confidence: 88%

Field Emission from p‐Type Si

Fursey¹,

Егоров²

1969

Physica Status Solidi (b)

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“…Earlier we proceeded from the assumption that in the region of deviation from F-N relation the surface charge becomes depleted because of the limited electron generation rate with the ever increasing barrier transparency [6]. Hence, this surface charge is no longer in a position to screen the bulk from penetration of the external field in the cathode.…”

Section: Introductionmentioning

confidence: 99%

“…

Continuing the discussion of experimental results of photosensitive field emission from ptype semiconduckor cathodes [6], a problem of electron emission in a one-dimensional metal-insulator-semiconductor structure is considered. Introducing the electron lifetime in the inversion layer with respect to emission (re) and the accumulation time of the inversion layer (71 L), the emission light-current-voltage characteristics in the inversion layer approximation are obtained from which the condition of photosensitive emission (t, L) follows.

…”

mentioning

confidence: 99%

On a model of photo-field-emission from p-type semiconductors

Yatsenko

1970

Phys. Stat. Sol. (a)

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Continuing the discussion of experimental results of photosensitive field emission from p‐type semiconductor cathodes [6], a problem of electron emission in a one‐dimensional metal–insulator‐semiconductor structure is considered. Introducing the electron lifetime in the inversion layer with respect to emission (τe) and the accumulation time of the inversion layer (τIL), the emission light–current–voltage characteristics in the inversion layer approximation are obtained from which the condition of photosensitive emission (τe ≪ τIL) follows. The discussion of the second photosensitivity condition (absence of the avalanche generation) shows that for semiconductors with a large electron affinity and a small gap width photosensitive emission without avalanche breakdown is possible with surface states of the density > 1013 cm−2 involved which are in field exchange with the valence band.

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“…Measurements of the energy of the emitted electrons on large single p-Si emitter tips on the end of a wire 8,10,20,21 show large potential drops over the emitter: up to 2 kV at an extraction potential of 6 kV. The potential drop depended on extraction potential and illumination level.…”

Section: Energy Shiftmentioning

confidence: 99%

Fabrication and characterization of p-type silicon field-emitter arrays for lithography

Teepen

Veen

Spijker

et al. 2005

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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p-doped silicon field emitters were studied experimentally to assess their usefulness in multibeam electron lithography. Both individual emitters and emitter arrays were fabricated from single crystal Si wafers with several doping levels. Current-voltage curves were measured for different temperatures and illumination conditions. The typical plateaus in the I-V curves and the sensitivity to light known from the literature were reproduced. Stability measurements showed a very stable total emission current even while the angular emission distribution fluctuated strongly, giving unstable currents in apertured beams. Measured light response times varied between 34 ns and 20 µs, depending on experimental conditions. It was found that in the plateau of the I-V curve, the energy of the electrons shifts over up to 100 eV when changing the extraction voltage over a few kilovolts. In operation, when the current is stable, the energy shift is rather unstable. The experimental results are discussed within a model of the emission process involving an induced p-n junction inside the tip. The conclusion is that p-doped silicon field emitters are not particularly useful for applications in electron beam lithography.

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Photo‐Field‐Emission from High‐Resistance Silicon and Germanium

Cited by 33 publications

References 7 publications

Field Emission from p‐Type Si

Field Emission from p‐Type Si

On a model of photo-field-emission from p-type semiconductors

Fabrication and characterization of p-type silicon field-emitter arrays for lithography

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