Photo‐EPR of deformation‐produced defects in GaAs

Abstract

Deformation-produced paramagnetic centres have been studied in G& crystals uniaxially compressed at 400 "C using EPR technique (X band). The effect of light with photon energies from 0.4 t o 1.5 eV on the populations of the centres htw been investigated. On the basis of the experimental results a model is proposed which locates the energy levels of two of the centres a t E , -1.05 eV and E, + 0.75 eV. Verformungserzeugte pmamagnetische Defekte in GaAs (einachsiger Druck bei 400 "C) wurden mit Hilfe der EPR (X Band) untemucht. Dabei wurde der EinfluB von Licht mit Photonenenergien von 0.4 bis 1.5 eV euf die Besetzung der Zentren gemessen. Auf der Grundlage der MeBergebnisse wird ein Model1 vorgeschlagen, des die Energieniveeus von zweien dieser Zentren bei E, -1.05 eV und E, + 0.75 eV annimmt.

Electron paramagnetic resonance of plastically deformed semiconductors : a short review

“…GaAs : The first results have been obtained in 1980 [22,23] : three lines labelled D1, D2 and D3 were correlated to the strain. These D lines proved to be [24] three out of the four lines identified later as the AsGa antisite signature in asgrown [25] or irradiated material [26,27].…”