Photo-electrochemical property of 2D hexagonal-shape GaN nanoplates synthesized using solid nitrogen source in molten salt

Purwiandono, Gani; Manseki, Kazuhiro; Sugiura, T.

doi:10.1016/j.jphotochem.2020.112499

Cited by 4 publications

(4 citation statements)

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“…The molten salt could accelerate the homogenous formation at the nanoscale during the nucleation and crystal growth of GaN particles. 26 The effect of LiCl-KCl on the crystal growth of InN can be explained as follows (Fig. 4): excess Cl À anions in the nitridation process (eqn (6)) can interact with the (100), (002), and (101) surfaces.…”

Section: Synthesis Of Inn Nanocrystalsmentioning

confidence: 99%

“…[11][12][13] As mentioned above, we have previously synthesized GaN nanoplates through the reaction of GaCl 3 and LiNH 2 using LiCl under N 2 atmosphere. 26 In addition, Carter et al 33 have reported the nitridation reaction of aluminum nitride (AlN) from AlCl 3 in trimethylphenylammonium chloride (TMPAC) as a molten salt under NH 3 gas. The polycrystalline AlN was successfully synthesized at 900 C. Our synthetic protocol using a molten salt approach could have signicant potential for synthesizing various metal nitride nanocrystals from a metal chloride.…”

Section: Synthesis Of Inn Nanocrystalsmentioning

confidence: 99%

“…We have successfully synthesized 2D hexagonal-shaped GaN nanoplates through the reaction of GaCl 3 and LiNH 2 using LiCl as the molten salt. 26 The use of LiCl as the molten salt was found to accelerate the homogenous GaN formation at the nanoscale. Photoelectrochemical analysis of the GaN electrode revealed that the hexagonal-shaped GaN electrode exhibited an anodic photocurrent that was higher by a factor of 2 compared to that of the random-shaped GaN.…”

Section: Introductionmentioning

confidence: 99%

“…Our previous study on LiCl-based GaN synthesis showed that the Cl À anions of LiCl can suppress the crystal growth of GaN through the Cl À coordination to Ga(III). 26 Based on the results, we anticipated that InN nanocrystals could be synthesized using LiClcontaining molten salts. In this paper, we use a KCl-LiCl mixture with eutectic composition of 60% mol LiCl and 40% mol KCl that has a melting point of 353 C (as shown in Table S1 † 28 ), taking into consideration that the molten salts for nitridation reactions of InN should have a melting point that is lower than the synthesis temperature at 400-500 C. 25,29 Herein, we present, for the rst time, the effect of molten salt on the nitridation synthesis of single-phase InN nanocrystals.…”

Section: Introductionmentioning

confidence: 99%

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A molten salt-based nitridation approach for synthesizing nanostructured InN electrode materials

2020

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Section: Synthesis Of Inn Nanocrystalsmentioning

confidence: 99%

Section: Synthesis Of Inn Nanocrystalsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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A molten salt-based nitridation approach for synthesizing nanostructured InN electrode materials

2020

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Low‐temperature chemical vapor deposition growth of 2D materials

Lei,

Wang,

et al. 2024

Electron

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Two‐dimensional (2D) materials have atomic thickness, and thickness‐dependent electronic transport, optical and thermal properties, highlighting great promise applications in future semiconductor devices. Chemical vapor deposition (CVD) is considered as an industry‐oriented method for macro‐synthesis of 2D materials. In conventional CVD, high temperatures are required for the synthesis of high‐quality large‐size 2D materials, which is incompatible with of back‐end‐of‐line of the complementary metal oxide semiconductor (CMOS) techniques. Therefore, low‐temperature synthesis of 2D materials is of critical importance for the advancement toward practical applications of 2D materials with the CMOS technologies. In this review, we focus on strategies for the low‐temperature growth of 2D materials, including the use of low‐melting‐point precursors, metal‐organic CVD, plasma‐enhanced CVD, van der Waals‐substrate vapor phase epitaxy, tellurium‐assisted CVD, salt‐assisted CVD, etc., with discussions of their reaction mechanisms, applications, associated advantages, and limitations. We also provide an outlook and perspectives of future low‐temperature chemical vapor deposition growth of 2D materials.

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