Photo-electrochemical and impedance investigation of passive layers grown anodically on titanium alloys

Oliveira, Nilson T. C.; Biaggio, Sonia R.; Piazza, S.; Sunseri, C.; Quarto, F. Di

doi:10.1016/j.electacta.2004.04.042

Cited by 57 publications

(41 citation statements)

References 33 publications

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“…The resulting oxides, which incorporate units of aluminium oxide and alloying element oxide [1,2], usually in an amorphous film structure, are also of interest for investigation of band gap energies in "mixed" oxides [3]. They may also be of practical value due to their controllable dielectric constants.…”

Section: Introductionmentioning

confidence: 99%

Formation of anodic films on sputtering-deposited Al–Hf alloys

Fogazza

Santamaria

Quarto

et al. 2009

Electrochimica Acta

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a b s t r a c tThe growth of barrier-type anodic films at high efficiency on a range of sputtering-deposited Al-Hf alloys, containing from 1 to 95 at.% Hf, has been investigated in ammonium pentaborate electrolyte. The alloys encompassed nanocrystalline and amorphous structures, the latter being produced for alloys containing from 26 to 61 at.% Hf. Except at the highest hafnium content, the films were amorphous and contained units of HfO 2 and Al 2 O 3 distributed relatively uniformly through the film thickness. Boron species were confined to outer regions of the films. The boron distributions suggest that the cation transport number decreases progressively with increasing hafnium concentration in the films, from ∼0.4 in anodic alumina to ∼0.2 for a film on an Al-61 at.% Hf alloy. The distributions of Al 3+ and Hf 4+ ions in the films indicate their similar migration rates, which correlates with the similarity of the energies of Al 3+ -O 2− and Hf 4+ -O 2− bonds. For an alloy containing ∼95 at.% Hf, the film was largely nanocrystalline, with a thin layer of amorphous oxide, of non-uniform thickness, at the film surface. The formation ratios for the films on the alloys changed approximately in proportion to the hafnium content of the films between the values for anodic alumina and anodic hafnia, ∼1.2 and 1.8 nm V −1 respectively.

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Section: Introductionmentioning

confidence: 99%

Formation of anodic films on sputtering-deposited Al–Hf alloys

Fogazza

Santamaria

Quarto

et al. 2009

Electrochimica Acta

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“…Fitting error of C ox calculated by the ZVIEW2 simulation program appeared to be less than . Considering that anodic oxide film thickness is linearly proportional to reciprocal capacitance of anodic oxide film on Ti, 14,17) it can be suggested that the thickness of native oxide films is proportional to OCP when it is grown natu- rally with immersion time on the mechanically polished CP-Ti surface in 0.1 M NaOH solution. However, it should be also pointed out that if the Ti surface is covered with thick oxide films already, OCP could not represent the thickness of native oxide films on the Ti surface.…”

Section: Methodsmentioning

confidence: 99%

“…9,10) The growth of the anodic oxide film on Ti in acids was investigated by E-t curves, cyclic voltammetry, 11 ) ellipsometry, 1 2 ) and a.c. impedance method. 11,[13][14][15][16][17][18][19] The anodic oxide film on Ti is well known to form barrier type or porous type in acid or in high alkaline solutions. The electronic properties of the oxide dielectric and semiconductive properties were investigated using electrochemical impedance spectroscopy.…”

Section: 4-9)mentioning

confidence: 99%

“…The electronic properties of the oxide dielectric and semiconductive properties were investigated using electrochemical impedance spectroscopy. [13][14][15][16][17][18][19] Although many works have been carried out on the anodic oxide formation on Ti, most of them were focused on the electrical or corrosion properties of oxide films in acidic solutions and there is still lack of information on the anodic oxide growth on Ti in alkaline solution, and the information on the oxide film capacitance for the mechanically polished Ti surface with different areas has not been reported.…”

Section: 4-9)mentioning

confidence: 99%

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A.c. Impedance Measurement of CP-Ti in 0.1 M NaOH Solution

Moon¹,

Kwon²,

Kim³

2012

Journal of Electrochemical Science and Technology

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:A.c. impedances of mechanically polished CP-Ti specimens were measured at open-circuit potential (OCP) with immersion time and under applied anodic potentials between −0.2 and 1 V Ag/AgCl in 0.1 M NaOH solution. Capacitances of native oxide films (C ox,na ) grown naturally and capacitances of anodic oxide films (C ox,an ) formed under applied anodic potentials were obtained to examine the growth of native and anodic oxide films in 0.1 M NaOH solution and how to use C ox,na for the surface area measurement of Ti specimen. 1/C ox,na and 1/C ox,an appeared to be linearly proportional to OCP and applied potential (E app ), with proportional constants of 0.086 and 0.051 uF, respectively. The C ox,na also appeared to be linearly proportional to geometric surface area of the mechanically polished CP-Ti fixture specimen, with proportional constants of 11.3 and 8.5 µF cm

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“…Several binary or ternary Ti-based alloys such as Ti-Nb 1) , TiTa 2) , Ti-Zr 3) , Ti-35Nb-7Zr-5Ta 4) , Ti-13Zr-13Nb 5) have been reported to be used as implants. Among them, Ti-13Nb-13Zr received increasing attention in recent years for its excellently comprehensive properties such as lower elastic modulus (about 70 GP) and superior corrosion resistance [5][6][7] . Modi cation of surface morphology and porosity of the alloys will be helpful to the connection and compatibility between the tissues and the implanted alloys.…”

Section: Introductionmentioning

confidence: 99%

Electrochemical Preparation of Porous Ti–13Zr–13Nb Alloy and It's Corrosion Behavior in Ringer's Solution

Yin

Zhou

et al. 2017

Mater. Trans.

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A ternary titanium alloy (Ti-13Zr-13Nb (TZN)) was prepared by direct electrochemical reduction of a sintered TiO 2 -ZrO 2 -Nb 2 O 5 mixture in molten CaCl 2 at 850 C with an energy consumption of 17 kWh/kg-alloy. The electrolytic Ti alloy was well sintered with bright metallic luster, and it was in α+β dual phase and of porous structure with designed composition. The corrosion behaviors of the obtained TZN in Ringer s solution were tested by open circuit potential and potentiodynamic polarization measurements. The results show that the corrosion rate of the porous electrolytic TZN alloy is lower than that of commercial pure titanium (CP-Ti) after being immersed in Ringer s solution for 10 days. The one-step electro-reduction of mixed oxide powers in molten salts could be an energy ef cient and straightforward way to prepare porous implantable alloys.

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Photo-electrochemical and impedance investigation of passive layers grown anodically on titanium alloys

Cited by 57 publications

References 33 publications

Formation of anodic films on sputtering-deposited Al–Hf alloys

Formation of anodic films on sputtering-deposited Al–Hf alloys

A.c. Impedance Measurement of CP-Ti in 0.1 M NaOH Solution

Electrochemical Preparation of Porous Ti–13Zr–13Nb Alloy and It's Corrosion Behavior in Ringer's Solution

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