Photo-Electrical Properties of Trilayer MoSe₂ Nanoflakes

Abstract

The photo-electrical properties of trilayer MoSe 2 nano°akes, fabricated by mechanical exfoliation, were systematically studied in this paper. The trilayer MoSe 2 nano°akes are n-type and possess a high gate modulation (On/O® ratio is larger than 10 5 Þ and a relatively high carrier mobility (1.79 cm 2 V À1 s À1 Þ. The¯eld e®ect transistor (FET) device of MoSe 2 shows sensitive photo response, high photoresponsivity (R ¼ 26:2 mA/W), quick response time (t < 20 ms), high external quantum e±ciency ( ¼ 5:1%Þ and high detection rate (D ¼ 2:7 Â 10 9 W À1 Þ for red and near-infrared wavelength. These results showed that the device based on few-layer MoSe 2 nano°akes exhibited good photo-electrical properties, which might open a new way to develop few-layer MoSe 2 -based material in the application of FETs and optoelectronics.

Ultraviolet-Ozone Treatment for Effectively Removing Adhesive Residue on Graphene

“…Table 1 illustrates some main parameters of FETs through calculating original data from transfer curves (the calculation method is the same as Ref. 33. As demonstrated in Fig.…”

“…This is due to UVO may cause some damage to graphene electronic structure, and bring some p-type doping in graphene. [30][31][32][33][34] In summary, UVO treatment is a quick and easy way to remove PVA sacri¯cial polymer layer.…”

An Al2O3 Gating Substrate for the Greater Performance of Field Effect Transistors Based on Two-Dimensional Materials

“…Two-dimensional (2D) materials, such as graphene and transition-metal dischalcogenides (TMDs), have attracted tremendous interest for possible applications in transistors [ 1 , 2 , 3 , 4 ], photodetectors [ 5 , 6 ], and touch panels [ 7 , 8 ] owing to their extraordinary properties. However, most efforts to date employ a 300 nm thick silicon dioxide (SiO 2 ) substrate as the gate dielectric layer.…”

“…Previously, Liao et al firstly reported that applying 72 nm Al 2 O 3 /Si substrates could improve the optical contrast and electrical properties of single-graphene FETs [ 21 ]. However, the Al 2 O 3 film they fabricated was not well insulated since they directly attached tape onto the Al 2 O 3 /Si substrate using mechanical exfoliation [ 6 ]. This conventional method may damage Al 2 O 3 films due to the strong adhesive force of the tape [ 21 ].…”

Bolometric Effect in Bi2O2Se Photodetectors

“…Time resolved photoresponse experiments under various light power densities were conducted . As Figure a shows, the device was illuminated under multiwavelength lights ranging from 350 to 1600 nm.…”