Photo- and electroluminescence of undoped and rare earth doped ZnO electroluminors

Bhushan, S.; Pandey, A. N.; Kaza, Balakrishna Rao

doi:10.1016/0022-2313(79)90020-6

Cited by 56 publications

(13 citation statements)

References 11 publications

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“…Recently, ZnO has attracted growing attention due to its potential applications, such as in ultraviolet light emitting devices and laser devices [1]. Compared with other materials, ZnO is a wide band-gap energy (E g ) semiconductor, and has a big exciton binding energy of 60 meV, which makes it attractive for developing short wavelength optoelectronic devices [2,3].…”

Section: Introductionmentioning

confidence: 99%

Photoluminescence spectra of nano-structured ZnO thin films

Feng

Zhou

Liu

et al. 2006

Journal of Luminescence

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Section: Introductionmentioning

confidence: 99%

Photoluminescence spectra of nano-structured ZnO thin films

Feng

Zhou

Liu

et al. 2006

Journal of Luminescence

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“…Theoretically studied dopants are indicated by border lines with a color distinguishing fully and partially studied works. Although not shown here, most elements in lanthanides were also doped to activate luminescence from intra 4 f -transitions70.…”

Section: Figurementioning

confidence: 99%

Property database for single-element doping in ZnO obtained by automated first-principles calculations

Yim

Lee

et al. 2017

Sci Rep

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Throughout the past decades, doped-ZnO has been widely used in various optical, electrical, magnetic, and energy devices. While almost every element in the Periodic Table was doped in ZnO, the systematic computational study is still limited to a small number of dopants, which may hinder a firm understanding of experimental observations. In this report, we systematically calculate the single-element doping property of ZnO using first-principles calculations. We develop an automation code that enables efficient and reliable high-throughput calculations on thousands of possible dopant configurations. As a result, we obtain formation-energy diagrams for total 61 dopants, ranging from Li to Bi. Furthermore, we evaluate each dopant in terms of n-type/p-type behaviors by identifying the major dopant configurations and calculating carrier concentrations at a specific dopant density. The existence of localized magnetic moment is also examined for spintronic applications. The property database obtained here for doped ZnO will serve as a useful reference in engineering the material property of ZnO through doping.

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“…So many researchers have investigated to clarify this varistor characteristic and the formation mechanism and so forth [1][2][3]. On the other hand, the rare earth doped materials have been widely studied as the optical materials, and Eu doped ZnO phosphor is one of such materials, which shows yellow to red luminescence from trivalent rare earth doped in ZnO [4][5][6][7]. Furthermore, luminescence from Pr 3+ ions in the oxides and fluorides have been much reported [7][8][9][10].…”

Section: Introductionmentioning

confidence: 98%

“…On the other hand, the rare earth doped materials have been widely studied as the optical materials, and Eu doped ZnO phosphor is one of such materials, which shows yellow to red luminescence from trivalent rare earth doped in ZnO [4][5][6][7]. Furthermore, luminescence from Pr 3+ ions in the oxides and fluorides have been much reported [7][8][9][10]. Thus the rare earth doped materials seem to be interesting in both the electric and optical devices, particularly Pr 3+ doped ZnO shows unique property because of its varistor characteristic, where the Pr 2 O 3 could to be located in the boundaries of ZnO grains.…”

Section: Introductionmentioning

confidence: 99%