Phosphorus ion implantation induced intermixing of InGaAs-InP quantum well structures

Tell, B.; Shah, Jagdeep; Thomas, Peter; Brown-Goebeler, K.F.; DiGiovanni, A. E.; Miller, B. I.; Koren, U.

doi:10.1063/1.101316

Cited by 45 publications

(9 citation statements)

References 15 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Comparable interdiffusion rates on the two sublattices are possible and it has been observed in intermixed InGaAs-InP QW's induced by sulphur diffusion [25], silicon diffusion [26], phosphorus-ion implantation [27], and impurity-free intermixing through repetitive thermal annealing [28]. The effect of both sublattices intermixing on the optical properties of this material system is also of importance.…”

Section: E Other Transitionsmentioning

confidence: 98%

Optical properties of an InGaAs-InP interdiffused quantum well

1998

IEEE J. Quantum Electron.

View full text Add to dashboard Cite

A comprehensive model is developed for the calculation of polarization-dependent absorption coefficients and refractive index of the InGaAs-InP interdiffused multiple-quantumwell at room temperature for wavelengths ranging from 1.1 to 2.4 m. Groups III and V types of interdiffusion are considered separately. The as-grown structure is a latticed-matched In0:53Ga0:47As-InP structure with a well width of 60Å. The optical transitions consist of a full quantum-well calculation together with 0; X; and L valleys contributions and through the Kramers-Krönig transformation to link the real and imaginary parts of the dielectric functions. The results show that Group-III-only interdiffusion produces compressive strain and results in a band-edge red shift and refractive index enlargement, while the tensile strain induced by Group-V-only interdiffusion results in a vice verse effect. This provides a left and right tunable band edge and positive and negative index steps dependent on the interdiffusion process. A small and constant birefringence of 0.005 at around 1.55 m can also be obtained over a 50-nm wavelength range by using Group-V-only interdiffusion. These properties have strong implications in realizing a tunable and high-performance device as well as for photonic integrations.

show abstract

Section: E Other Transitionsmentioning

confidence: 98%

Optical properties of an InGaAs-InP interdiffused quantum well

1998

IEEE J. Quantum Electron.

View full text Add to dashboard Cite

show abstract

“…In particular, the band gap energy shift due to the enhanced intermixing of quantum wells is one of the most useful techniques for the fabrication of integrated photonic devices. 2 For these reasons various quantum well intermixing techniques, such as impurity induced disordering, 3,4 impurity free vacancy disordering ͑IFVD͒, [5][6][7][8][9][10][11][12] and ion implantation induced disordering 13,14 have been attempted. The impurities ͑for impurity-induced disordering͒ and implantation-induced damages ͑for ion implantation-induced disordering͒ introduced into the active region can degrade the optical properties of the intermixed region.…”

Section: Introductionmentioning

confidence: 99%

Effects of rapid thermal annealing on the optical properties of In0.53Ga0.47As/In0.52Al0.48As multiple quantum wells with InGaAs and dielectric capping layers

Song

Lee

et al. 2002

Journal of Applied Physics

View full text Add to dashboard Cite

Articles you may be interested inMolecular beam epitaxy growth of In 0.52 Al 0.48 As ∕ In 0.53 Ga 0.47 As metamorphic high electron mobility transistor employing growth interruption and in situ rapid thermal annealing Appl. Phys. Lett. 88, 132108 (2006); 10.1063/1.2189607Effects of rapid thermal annealing on quality of In 0.52 Al 0.48 As ∕ In 0.53 Ga 0.47 As multiquantum wells grown on a compositionally graded In Al As ∕ In Al Ga As metamorphic buffer layer

show abstract

“…Recent improvements in metalorganic vapor phase epitaxy 5 and molecular beam epitaxy 6 have enabled high-quality InGaAs/InP strained-layer structures to be fabricated. There is a growing interest in selective area disordering of these QW structures 7 using masked ion implantation 8 and masked impurity diffusion, 9 with special emphasis on high-performance device applications and monolithic integration. The disordering process involves thermally induced interdiffusion of the constituent atoms across the well/barrier interface, where the rate of the interdiffusion process is a function of the nature and dose ͑con-centration͒ of the implanted ͑impurity͒ ions, also the annealing temperature and time.…”

Section: Introductionmentioning

confidence: 99%

The electro-optic properties of interdiffused InGaAs/InP quantum well structures

Weiss

Chan²,

Shiu

et al. 2000

Journal of Applied Physics

View full text Add to dashboard Cite

We present a model for the optical properties of interdiffused InGaAs/InP quantum well structures. The structure is investigated in a two-phase group V interdiffusion that is characterized by three parameters: the interdiffusion coefficient in the barrier layer, the well layer, and the concentration ratio of diffused species at the well/barrier interface. The quantum confined Stark effect is considered including the exciton and full subband under an applied electric field. Results show interesting optical properties for the TE and TM polarization and a tunable operation wavelength near 1.55 m for modulators.

show abstract

Phosphorus ion implantation induced intermixing of InGaAs-InP quantum well structures

Abstract: A comparison of spectroscopic and microscopic observations of ion-induced intermixing in InGaAs/InP quantum wells Appl.

Cited by 45 publications

References 15 publications

Optical properties of an InGaAs-InP interdiffused quantum well

Optical properties of an InGaAs-InP interdiffused quantum well

Effects of rapid thermal annealing on the optical properties of In0.53Ga0.47As/In0.52Al0.48As multiple quantum wells with InGaAs and dielectric capping layers

The electro-optic properties of interdiffused InGaAs/InP quantum well structures

Contact Info

Product

Resources

About