Phosphorus incorporation into graphitic material via hot pressing of graphite oxide and triphenylphosphine

Окотруб, А. В.; Kanygin, M. A.; Koroteev, Victor O.; Stolyarova, Svetlana G.; Gorodetskiy, D. V.; Fedoseeva, Yu. V.; Asanov, I. P.; Bulusheva, L. G.; Vyalikh, Anastasia

doi:10.1016/j.synthmet.2019.01.005

Cited by 16 publications

(10 citation statements)

References 40 publications

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“…A low-energy spin-orbit doublet with the energy of P 2p3/2 component of ca. 132.0 eV is assigned to the C-P=O bonds [54,55]. An intense doublet with the The studies of nitrogen-containing graphitic materials have detected the lowest thermal stability of the pyrrolic N [49,50] and here we show that the used temperature is sufficient for the de-hydrogenation of this nitrogen.…”

Section: Resultsmentioning

confidence: 49%

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Electronic Structure of Nitrogen- and Phosphorus-Doped Graphenes Grown by Chemical Vapor Deposition Method

et al. 2020

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Heteroatom doping is a widely used method for the modification of the electronic and chemical properties of graphene. A low-pressure chemical vapor deposition technique (CVD) is used here to grow pure, nitrogen-doped and phosphorous-doped few-layer graphene films from methane, acetonitrile and methane-phosphine mixture, respectively. The electronic structure of the films transferred onto SiO2/Si wafers by wet etching of copper substrates is studied by X-ray photoelectron spectroscopy (XPS) and near-edge X-ray absorption fine structure (NEXAFS) spectroscopy using a synchrotron radiation source. Annealing in an ultra-high vacuum at ca. 773 K allows for the removal of impurities formed on the surface of films during the synthesis and transfer procedure and changes the chemical state of nitrogen in nitrogen-doped graphene. Core level XPS spectra detect a low n-type doping of graphene film when nitrogen or phosphorous atoms are incorporated in the lattice. The electrical sheet resistance increases in the order: graphene < P-graphene < N-graphene. This tendency is related to the density of defects evaluated from the ratio of intensities of Raman peaks, valence band XPS and NEXAFS spectroscopy data.

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Section: Resultsmentioning

confidence: 49%

“…A low-energy spin-orbit doublet with the energy of P 2p 3/2 component of ca. 132.0 eV is assigned to the C-P=O bonds [54,55]. An intense doublet with the P 2p 3/2 component located at ca.…”

Section: Resultsmentioning

confidence: 99%

Electronic Structure of Nitrogen- and Phosphorus-Doped Graphenes Grown by Chemical Vapor Deposition Method

et al. 2020

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“…The spectrum shows two doublets with 2p 3/2 components at 130.3 and 133.3 eV (Figure a). The first corresponds to elemental phosphorus , and accounts for ∼80% of the signal. The weaker second signal is attributed to oxidized phosphorus (∼20%) .…”

Section: Resultsmentioning

confidence: 99%

“Missing” One-Dimensional Red-Phosphorus Chains Encapsulated within Single-Walled Carbon Nanotubes

et al. 2022

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We identify the “missing” 1D-phosphorus allotrope, red phosphorus chains, formed in the interior of tip-opened single-walled carbon nanotubes (SWCNTs). Via a comprehensive experimental and theoretical study we show that in intermediate diameter cavities (1.6–2.9 nm), phosphorus vapor condenses into linear P8]P2 chains and fibrous red-phosphorus type cross-linked double-chains. Thermogravimetric and X-ray photoelectron spectroscopy analysis estimates ∼7 atom % of elemental phosphorus in the sample, while high-resolution energy dispersive X-ray spectroscopy mapping reveals that phosphorus fills the SWCNTs. High-resolution transmission electron microscopy (HRTEM) shows long chains inside the nanotubes with varying arrangement and packing density. A detailed match is obtained between density functional theory (DFT) simulations, HRTEM, and low-frequency Raman spectroscopy. Notably, a signature spectroscopic signal for phosphorus chain cross-linking is identified. When coupled with reinterpretation of literature data and wide-ranging DFT calculations, these results reveal a comprehensive picture of the diameter dependence of confined 1D-phosphorus allotropes.

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“…The treatment of MoS 3 /HG or HG was carried out in a sealed chamber of the setup described elsewhere . A sample was held between punches with a diameter of 10 mm into a graphitic mould.…”

Section: Methodsmentioning

confidence: 99%

Pressure‐Assisted Interface Engineering in MoS₂/Holey Graphene Hybrids for Improved Performance in Li‐ion Batteries

et al. 2019

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The interface between MoS2 and carbon components plays an important role in the performance of the hybrid material in Li‐ion batteries. To enhance the interfacial interactions, holey graphene (HG) layers are used as a support for the forming MoS2, and the compression of components is used during the synthesis. Initial compositions, obtained by deposition of MoS3 on the surface of HG stacks, are annealed at 400–600 °C and 100 bar. Using a set of characterization methods, the synthesis products are studied and it is found that the hole boundaries anchor MoS2 via covalent C–Mo coupling, while the applied pressure assists in the development of a thin MoS2 coating. The number of layers and their lateral dimensions are dependent on the synthesis temperature. The tests of Li‐ion half‐cells detected higher values of specific capacity for MoS2/HG hybrids synthesized under compression. Enhanced interaction between the components prevents the destruction of MoS2 during discharging–charging of electrodes, and the capacity increases due to the accommodation of lithium between the layers of MoS2 and HG. The structural features of MoS2/HG hybrids stipulate growth of specific capacity with long‐term cycling to ≈1200 mA h g−1 at a current density of 0.5 A g−1.

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Phosphorus incorporation into graphitic material via hot pressing of graphite oxide and triphenylphosphine

Cited by 16 publications

References 40 publications

Electronic Structure of Nitrogen- and Phosphorus-Doped Graphenes Grown by Chemical Vapor Deposition Method

Electronic Structure of Nitrogen- and Phosphorus-Doped Graphenes Grown by Chemical Vapor Deposition Method

“Missing” One-Dimensional Red-Phosphorus Chains Encapsulated within Single-Walled Carbon Nanotubes

Pressure‐Assisted Interface Engineering in MoS₂/Holey Graphene Hybrids for Improved Performance in Li‐ion Batteries

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Phosphorus incorporation into graphitic material via hot pressing of graphite oxide and triphenylphosphine

Cited by 16 publications

References 40 publications

Electronic Structure of Nitrogen- and Phosphorus-Doped Graphenes Grown by Chemical Vapor Deposition Method

Electronic Structure of Nitrogen- and Phosphorus-Doped Graphenes Grown by Chemical Vapor Deposition Method

“Missing” One-Dimensional Red-Phosphorus Chains Encapsulated within Single-Walled Carbon Nanotubes

Pressure‐Assisted Interface Engineering in MoS2/Holey Graphene Hybrids for Improved Performance in Li‐ion Batteries

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Product

Resources

About

Pressure‐Assisted Interface Engineering in MoS₂/Holey Graphene Hybrids for Improved Performance in Li‐ion Batteries