Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002.
DOI: 10.1109/pvsc.2002.1190514
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Phosphorus gettering in multicrystalline silicon studied by neutron activation analysis

Abstract: Neutron Activation Analysis (NAA) is a powerful and sensitive technique for measuring trace amounts of impurities. In this work, we have applied NAA to the problem of identifying metallic impurities within the bulk of solar-grade cast multicrystalline silicon (mc-Si) wafers. In particular, the change in concentrations of these contaminants after phosphorus gettering is monitored, revealing a marked reduction in some metal species, but not in others. BACKGROUND

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Cited by 23 publications
(29 citation statements)
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“…Cu 3 Si clusters, or individual Cu atoms, may be stabilized either by the lattice strains of adjacent structural defects or other metal clusters. 21,70 Specifically, the chemical interactions between Cu and other metal species (of which mc-Si contains an abundance 24,26 ) are not well understood at the present time. The singular result of all these effects would likely be a somewhat lower effective segregation coefficient for mc-Si than that for singlecrystalline silicon.…”
Section: Al-gettering and Dissolution Of Cu Precipitatesmentioning
confidence: 98%
See 1 more Smart Citation
“…Cu 3 Si clusters, or individual Cu atoms, may be stabilized either by the lattice strains of adjacent structural defects or other metal clusters. 21,70 Specifically, the chemical interactions between Cu and other metal species (of which mc-Si contains an abundance 24,26 ) are not well understood at the present time. The singular result of all these effects would likely be a somewhat lower effective segregation coefficient for mc-Si than that for singlecrystalline silicon.…”
Section: Al-gettering and Dissolution Of Cu Precipitatesmentioning
confidence: 98%
“…Not surprisingly, copper-rich particles have been observed at structural defects in poorly-performing regions of mc-Si solar cell material [21][22][23][24][25] , complementing neutron activation analysis (NAA) data reporting Cu concentrations in mc-Si as high as 10 13 cm -3 . 26 While Cu-rich clusters are undoubtedly not the only type of defect responsible for reducing the efficiencies of mc-Si solar cells, their known recombination activity and repeated observation in poorly-performing regions indicate they most certainly can be a contributing factor.…”
Section: Introductionmentioning
confidence: 99%
“…[1][2][3] These impurities can decrease the efficiencies of siliconbased devices in a variety of ways, including bulk recombination, 4,5 increased leakage current, [6][7][8] and direct shunting. 9,10 The groundbreaking study of Davis et al 11 specified threshold concentrations for individual metal species in Czochralski silicon (CZ-Si) photovoltaic devices, correlating the total metal content in a CZ-Si wafer to a quantified decrease in solar cell efficiency.…”
Section: Introductionmentioning
confidence: 99%
“…13 Other quantitative studies of the effect of phosphorous diffusion gettering have measured high chromium concentrations at near-surface regions, suggesting external gettering, [15][16][17] as well as a reduction of the total bulk chromium concentration. 18 For this study, two adjacent (sister) wafers were selected from a 12 kg laboratory-scale intentionally chromiumcontaminated mc-Si ingot. 11 These wafers were taken from 83% ingot height.…”
mentioning
confidence: 99%
“…13,[15][16][17][18] Lifetimes (Cr i , Dn ¼ 10 15 cm À3 ) and interstitial concentrations as measured by quasi-steady-state photoconductance (QSSPC) before and after gettering are shown in Fig. 3.…”
mentioning
confidence: 99%