“…However, increasing the proportion of capacity controlled pseudo‐capacitance in capacity by heteroatom doping, can improve the capacity and ameliorate the rate performance of the material [11] . This is mainly because these substituted heteroatoms (such as N ,[8b,11a,11d,12] S, [13] B, [11c] O, [9,14] P, [11e,15] and F [11b,16] ) generally can optimize the electronic conductivity of the material, modify its electronic structure, provide more electrochemically active sites and expand interlayer spacing [10,17] . In the research of heteroatom‐doped carbon‐based anode materials for PIBs, the most is to introduce more defects and active sites into the carbon skeleton through N‐doping to improve the electronic conductivity of the material, provide potassium ion storage and faster reaction kinetics [12,17b,18] .…”