Phosphorus atomic layer doping of germanium by the stacking of multiple δ layers

Scappucci, Giordano; Capellini, Giovanni; Klesse, Wolfgang M.; Simmons, M. Y.

doi:10.1088/0957-4484/22/37/375203

Cited by 30 publications

(32 citation statements)

References 21 publications

(31 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…[47][48][49][50][51] Monolayer doping on InGaAs III-V semiconductors such as InGaAs have great promise for the active channel materials of proposed device geometries that are conducive to aggressive scaling, such as field-effect transistors. However significant improvements in the source and drain resistances are required if InGaAs is to scale beyond the 22 nm technology node.…”

Section: Monolayer Doping On Gementioning

confidence: 99%

Chemical approaches for doping nanodevice architectures

et al. 2016

View full text Add to dashboard Cite

Access to the full text of the published version may require a subscription. after most spin-on-doping processes which are often difficult to remove. In-situ doping of nanostructures is especially common for bottom-up grown nanostructures but problems associated with concentration gradients and morphology changes are commonly experienced. Monolayer doping (MLD) has been shown to satisfy the requirements for extended defect-free, conformal and controllable doping on many materials ranging from traditional silicon and germanium devices to emerging replacement materials such as III-V compounds but challenges still remain, especially with regard to metrology and surface chemistry at such small feature sizes. This article summarises and critically assesses developments over the last number of years regarding the application of gas and solution phase techniques to dope silicon-, germanium-and III-V-based materials and nanostructures to obtain shallow diffusion depths coupled with high carrier concentrations and abrupt junctions. Rights3

show abstract

Section: Monolayer Doping On Gementioning

confidence: 99%

Chemical approaches for doping nanodevice architectures

et al. 2016

View full text Add to dashboard Cite

show abstract

“…Carrying on from the success of the δ-doped Si:P fabrication route, δ-doped P in Ge (Ge:P) structures are now being fabricated on the nanometre scale utilising the same in situ doping techniques. 53,54 Presently, experiments are focused on highly doped Ge:P δ-layers [54][55][56] which could serve as the channel material in the next generation of high-speed nano-transistors.…”

Section: Application Of the Model To A Ge:p δ-Layermentioning

confidence: 99%

Electronic properties ofδ-doped Si:P and Ge:P layers in the high-density limit using a Thomas-Fermi method

2014

View full text Add to dashboard Cite

The Thomas-Fermi-Dirac (TFD) approximation and an sp 3 d 5 s * tight binding method were used to calculate the electronic properties of a δ-doped phosphorus layer in silicon. This self-consistent model improves on the computational efficiency of "more rigorous" empirical tight binding and ab initio density functional theory models without sacrificing the accuracy of these methods. The computational efficiency of the TFD model provides improved scalability for large multi-atom simulations, such as of nanoelectronic devices that have experimental interest. We also present the first theoretically calculated electronic properties of a δ-doped phosphorus layer in germanium as an application of this TFD model.

show abstract

“…Surface analysis of P-delta doping in Ge using molecular beam epitaxy is reported in Refs. [4,5]. A potential advantage of the atomic layer processing approach is self-limitation of the processes, which is essential for precise dopant dose and location control and for improved process robustness.…”

Section: Introductionmentioning

confidence: 99%