Phosphorene nanoribbon field effect transistor with a dual material gate
Hadi Owlia,
Mohammad Bagher Nasrollahnejad,
Roohallah Fazli
Abstract:In this paper, we present a dual-material gate phosphorene nanoribbon field-effect transistor (DMG-PNRFET) that combines the advantages of a PNRFET with a DMG configuration. In this structure, the difference in the work function creates an extra barrier for band-to-band tunneling from the valence band (VB) to the conduction band (CB) inside the channel leading to lower off-currents. An illustration for transmission coefficients with relevant band diagrams is included to demonstrate energy-resolved current spec… Show more
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