Phosphor-Free GaN-Based Transverse Junction White-Light Light-Emitting Diodes With Regrown n-Type Regions

Shi, Jin‐Wei; Chen, C.-C.; Wang, C.-K.; Lin, C. S.; Sheu, Jinn-Kong; Lai, Wei–Chi; Kuo, Chia‐Hung; Tun, Chun-Ju; Yang, Tsan; Tsao, F. C.; Chyi, Jen‐Inn

doi:10.1109/lpt.2008.916966

Cited by 14 publications

(2 citation statements)

References 11 publications

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“…3(b), is usually reported for VJ SLDs with a single wavelength of MQWs, due to the appearance of the lasing phenomenon under high current injection [5,13]. Further improvement in optical bandwidth performance of the demonstrated device may be expected by optimizing the number of MQWs with different wavelengths [14].…”

Section: Resultsmentioning

confidence: 83%

Transverse-junction superluminescent diodes at the 1.1μm wavelength regime

Guol¹,

Wang²,

Wu³

et al. 2008

Opt. Express

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We demonstrate, for the first time to our knowledge, GaAs-based transverse-junction (TJ) superluminescent diodes (SLDs) that operate at a wavelength of 1.1 microm. Due to lateral current injection by use of TJ, specified as transverse carrier flow spread in each quantum well horizontally instead of vertical well-by-well injection, nonuniform carrier distribution can be minimized among different multiple quantum wells (MQWs), which is a problem in vertical-junction (VJ) SLDs whose electroluminescent (EL) spectrum is governed by the center wavelength of QWs near the p side. In contrast with a VJ SLD, the EL spectrum of our device is determined by QWs that have a larger differential gain than the positions of QWs neighbored with a p side layer.

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Section: Resultsmentioning

confidence: 83%

Transverse-junction superluminescent diodes at the 1.1μm wavelength regime

Guol¹,

Wang²,

Wu³

et al. 2008

Opt. Express

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“…Many approaches have been proposed to fabricate single-chip white LEDs without using phosphors for the phosphors covered LEDs suffer from lower efficiency and the multi-chip LEDs have the disadvantages of assembling complication [1][2][3]. A prospective approach for obtaining phosphor-free single-chip white LEDs is using GaN-based irregular multiple quantum well (IMQW) structures, which have been reported in our previous works [4,5].…”

Section: Introductionmentioning

confidence: 99%

Barrier effects on the optoelectronic properties of GaN-based irregular multiple quantum wells for dichromatic white LEDs

Chen

2010

Sci. China Technol. Sci.

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The GaN-based irregular multiple quantum well (IMQW) structures for dichromatic white light-emitting diodes (LEDs) are assembled by two different types of QWs emitting complementary blue and yellow light. The electronic and optical properties of the designed GaN-based IMQW structures are investigated in details by fully considering the effects of strain, well-coupling, valence band-mixing and polarization effect by employing a newly modified theoretical model based on the k⋅p theory. The influences of the height and thickness of the barrier between blue QWs and yellow QWs together with the polarization effect on the optoelectronic properties of GaN-based IMQW structure are analyzed. Numerical results show that the ratio of the two color lights emmited from the IMQW structure for dichromatic white LED can be tuned by changing the height and thickness of the barrier between two types of QWs. irregular multiple quantum wells, GaN-based materials, white light-emitting diodes Citation:Chen G X, Lu H M. Barrier effects on the optoelectronic properties of GaN-based irregular multiple quantum wells for dichromatic white LEDs. Sci

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