“…Phosphorus-containing molecules such as Cd[(CH 3 ) 2 -PS 2 ] 2 , [47] Cd[(C 2 H 5 )PS 2 ] 2 , [48] and M[( t Bu) 2 P(Q)NR] 2 (R = i Pr, c-C 6 H 11 ; M = Zn, Cd; Q = Se, Te) [49] can be used to grow films with no risk of phosphorus incorporation. In three studies, the films were grown under vacuum, in the temperature range 400±500 C, with source temperatures in the range 160±200 C, except for Cd[( t Bu) 2 P(Te)N i Pr] 2 , which was heated to 100 C. Takahashi et al, [47] and Evans and Williams [48] noticed that pre-metallization (copper, silver, gold) of the substrate surfaces (glass or (111)InP) greatly facilitated the deposition of CdS.…”