Phonons in III–V nitrides: Confined phonons and interface phonons

Dutta, Mitra; Alexson, Dimitri; Bergman, Leah; Nemanich, R. J.; Dupuis, R. D.; Komirenko, S. M.; Stroscio, Michael A.

doi:10.1016/s1386-9477(01)00217-x

Cited by 24 publications

(12 citation statements)

References 11 publications

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“…In the literature, some information is provided on the interface modes ͑IFs͒ from AlN/GaN superlatticelike structures. 20,21 However, in our study, we have observed their contribution in such 2DEG heterostructures. Indeed, we have observed changes in the UV Raman intensity of the IF peaks as a function of an applied bias voltage.…”

Section: H302contrasting

confidence: 53%

Structural and Electrical Characterization of Al[sub x]Ga[sub 1−x]N/GaN Interfaces for UV Photodetectors

Lin

Alarcón-Lladó

Kim

et al. 2010

Electrochem. Solid-State Lett.

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In the present study, we have investigated the incorporation of 2DEG Al x Ga 1−x N/GaN heterostructures with different Al content ͑19% and 39%͒ in UV metal-semiconductor-metal photodetectors ͑PDs͒, employing Schottky contacts. The structural properties of the heterostructures on sapphire substrates have been characterized by transmission electron microscopy, high resolution X-ray diffraction, atomic force microscopy, and UV micro-Raman spectroscopy. In order to study the behaviors of the interface phonon modes observed from such 2DEG structures, UV Raman measurements were simultaneously performed with and without applied bias voltages. The electrical properties of the UV PDs have been correlated to the optical observations.

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Section: H302contrasting

confidence: 53%

Structural and Electrical Characterization of Al[sub x]Ga[sub 1−x]N/GaN Interfaces for UV Photodetectors

Lin

Alarcón-Lladó

Kim

et al. 2010

Electrochem. Solid-State Lett.

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“…Gleize's group [19] also measured the angular dispersion of polar IO and QC phonons in a hexagonal nitride SL, and the experimental data were in good agreement with the results of a previous calculation based on a DCM. Dutta et al [20] reported Raman scattering results in binary SLs of GaN/(In)AlN, which also proves the availability and reasonability of DCM for the description of polar optical phonon modes in wurtzite nitride heterostructures. Recently, Davydov et al [21] studied lattice dynamics and Raman spectra of strained hexagonal wurtzite GaN/AlN and GaN/AlGaN SLs, and the IO and the QC phonon modes were observed and confirmed in their experiment.…”

Section: Introductionmentioning

confidence: 80%

“…In fact, on the basis of the dielectric continuum approximation and Loudon's uniaxial crystal model [11], several authors have made great contributions in studying the polar optical phonons and their electron-phonon interactions in wurtzite nitride SL systems [12][13][14][15][16][17][18][19][20][21]. On the side of theoretical researches, Gleize and his coworkers [12] investigated anisotropy effects on polar phonon modes in wurtzite GaN/AlN SLs, and the quasi-confined (QC) phonon modes and interface-optical (IO) phonon modes were found in the SL structures.…”

Section: Introductionmentioning

confidence: 99%

Polar propagating optical phonon states and their dispersive spectra in wurtzite nitride superlattices: Quantum size effect

Zhang

Shao

2010

Superlattices and Microstructures

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“…Gleize's group [12] also measured the angular dispersion of polar IO and QC phonons in a hexagonal nitride SL, and the experimental data were in good agreement with the results of a previous calculation based on a DCM. Dutta et al [13] reported Raman scattering results in binary SLs of GaN/ (In)AlN, which also proves the availability and reasonability of DCM for the description of polar optical phonon modes in wurtzite nitride heterostructures. Recently, Davydov et al [14] studied lattice dynamics and Raman spectra of strained hexagonal wurtzite GaN/AlN and GaN/AlGaN SLs, and the IO and the QC phonon modes were observed and confirmed in their experiment.…”

mentioning

confidence: 80%

Full optical phonon states and their dispersive spectra of a wurtzite GaN/AlGaN superlattice: Quantum size effect

Zhang

2011

Physica Status Solidi (b)

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The polar optical phonon states of four types of phonon modes including the interface optical (IO) modes, the propagating (PR) modes, the quasi-confined (QC) phonon modes in well-layer material (QC w ), and the QC phonon modes in barrier-layer material (QC B ) in a wurtzite GaN/Al x Ga 1-x N superlattice (SLs) are investigated within the dielectric continuum model framework. The analytical phonon states of the four types of modes and their dispersive equations in the wurtzite GaN/Al x Ga 1-x N SL structures are obtained. Numerical calculations on the dispersive spectra of phonon modes and the quantum size effect are performed for a wurtzite GaN/Al 0.15 Ga 0.85 N SL. Results reveal that dispersive curves of phonon modes in SLs form a series of frequency bands. The behaviors of QC w modes reducing to PR and IO modes are observed clearly. With the increase of well-layer GaN width d 1 of the SLs, the dispersion of the QC B modes become weaker and weaker, and their frequency bands become narrower and narrower. But the PR, IO, and the QC w phonon modes become more dispersive, and the frequency bands of these modes become wider and wider as d 1 increases. The present theoretical scheme and numerical results are quite useful for analyzing the dispersive spectra of full phonon modes and their polaronic effect in wurtzite GaN/AlGaN SL structures.

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Phonons in III–V nitrides: Confined phonons and interface phonons

Cited by 24 publications

References 11 publications

Structural and Electrical Characterization of Al[sub x]Ga[sub 1−x]N/GaN Interfaces for UV Photodetectors

Structural and Electrical Characterization of Al[sub x]Ga[sub 1−x]N/GaN Interfaces for UV Photodetectors

Polar propagating optical phonon states and their dispersive spectra in wurtzite nitride superlattices: Quantum size effect

Full optical phonon states and their dispersive spectra of a wurtzite GaN/AlGaN superlattice: Quantum size effect

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