Phonons in 3C-, 4H-, and 6H-SiC

Nienhaus, Hermann; Kampen, Thorsten U.; Mönch, Winfried

doi:10.1016/0039-6028(94)00775-6

Cited by 87 publications

(51 citation statements)

References 26 publications

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“…The Raman spectrum of single crystalline Si is also presented in the figure as a dotted line. The Raman spectrum of 6H SiC displays vibrational modes related to transverse optical (TO) modes of the SiC lattice [16,17]. The observed TO vibrational modes of 6H SiC are 765 and 788 cm À 1 and are almost identical to the reported value [17].…”

Section: Resultssupporting

confidence: 69%

Luminescence properties of spark-processed SiC

Chang

Sakai

2004

Materials Letters

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Section: Resultssupporting

confidence: 69%

Luminescence properties of spark-processed SiC

Chang

Sakai

2004

Materials Letters

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“…In 6H-SiC there is a single surface phonon mode at ω s = 116meV [22]. The dielectric constants of the bulk material are ǫ s = 9.7, ǫ ∞ = 6.5, which yields β = 0.040 and g = 1.7 · 10 −2 .…”

Section: Introductionmentioning

confidence: 99%

Substrate-limited electron dynamics in graphene

2008

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We study the effects of polarizable substrates such as SiO2 and SiC on the carrier dynamics in graphene. We find that the quasiparticle spectrum acquires a finite broadening due to the longrange interaction with the polar modes at the interface between graphene and the substrate. This mechanism results in a density dependent electrical resistivity, that exhibits a sharp increase around room temperature, where it can become the dominant limiting factor of electron transport. The effects are weaker in doped bilayer graphene, due to the more conventional parabolic band dispersion.

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“…6, it can be seen that there is a strong coupling of graphene's π electron excitations with the non-dispersing Fuchs-Kliever surface phonon mode in the SiC substrate at the frequency ≈ 116 meV. 11,62 We note that a dynamic treatment of the substrate phonon excitation through Eq. (4), the use of a q-dependent damping rate, and the inclusion of low-frequency features through the prefactor in Eq.…”

mentioning

confidence: 99%

Dynamic polarization of graphene by moving external charges: Random phase approximation

et al. 2009

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We evaluate the stopping and image forces on a charged particle moving parallel to a doped sheet of graphene by using the dielectric response formalism for graphene's π-electron bands in the random phase approximation (RPA). The forces are presented as functions of the particle speed and the particle distance for a broad range of charge-carrier densities in graphene. A detailed comparison with the results from a kinetic equation model reveal the importance of inter-band single-particle excitations in the RPA model for high particle speeds. We also consider the effects of a finite gap between graphene and a supporting substrate, as well as the effects of a finite damping rate that is included through the use of Mermin's procedure. The damping rate is estimated from a tentative comparison of the Mermin loss function with a HREELS experiment. In the limit of low particle speeds, several analytical results are obtained for the friction coefficient that show an intricate relationship between the charge-carrier density, the damping rate, and the particle distance, which may be relevant to surface processes and electrochemistry involving graphene.

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Phonons in 3C-, 4H-, and 6H-SiC

Cited by 87 publications

References 26 publications

Luminescence properties of spark-processed SiC

Luminescence properties of spark-processed SiC

Substrate-limited electron dynamics in graphene

Dynamic polarization of graphene by moving external charges: Random phase approximation

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