1969
DOI: 10.1007/bf01737540
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Phonon structure of Mn4+ activator centres in AIN

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Cited by 18 publications
(9 citation statements)
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“…The films have been doped with rare earth elements, and light emission from doped crystalline and amorphous AlN in both the visible and infrared has been confirmed [5,6]. Manganese has been incorporated in powder samples of AlN [7][8][9], with the tetravalent manganese ion, Mn 4+ , occupying tetrahedral sites. The incorporation of manganese into semiconductor hosts is of interest because the manganese activated AlN exhibits a maximum in the https://doi.org/10.1557/S1092578300004221 Downloaded from https://www.cambridge.org/core.…”
Section: Introductionmentioning
confidence: 99%
“…The films have been doped with rare earth elements, and light emission from doped crystalline and amorphous AlN in both the visible and infrared has been confirmed [5,6]. Manganese has been incorporated in powder samples of AlN [7][8][9], with the tetravalent manganese ion, Mn 4+ , occupying tetrahedral sites. The incorporation of manganese into semiconductor hosts is of interest because the manganese activated AlN exhibits a maximum in the https://doi.org/10.1557/S1092578300004221 Downloaded from https://www.cambridge.org/core.…”
Section: Introductionmentioning
confidence: 99%
“…Several recent reports on electrical and luminescent pro perties of AIN seem to show its potentiality of being exploited as a suitable material for electronic devices (Karel & Pastrnak, 1970;Wauk & Winslow, 1968;Cox et al, 1967). Philips' new scale of ionicity gives us another interest in A1N from the physico-chemical point of view (Iwata, 1971).…”
mentioning
confidence: 99%
“…This new mechanism has been reported for growth of several metal whiskers. As to compound crystals, this mechanism has been reported only for whiskers of GaAs , GaP (Barns & Ellis, 1965), SiC (Wagner, 1964;Ryan et al, 1967;Patrick .et al, 1966;Knippenberg & Verspui, 1969) and a-Si3N4 (Knippenberg & Verspui, 1969). Recently, the authors discovered that whiskers and prisms of AIN grew through the VLS mechanism during the course of the sublimation process (Ishii et al, 1970) .…”
mentioning
confidence: 99%
“…Ein untersuchtes Materialsystem, ursprünglich in der Herstellung patentiert als rot-leuchtendes Luminophor für technische Anwendungen [16], ist mangandotiertes AlN. Karel et al fanden in diesem System eine Lumineszenz um 2.08 eV, welche eine stark ausgeprägte Feinstruktur aufweist [212,213,250]. Die einzelnen Peaks haben dabei Abstände einer Phononenenergie von 23 meV [213] und werden mit lokalen Schwingungen erklärt.…”
Section: Metalleunclassified
“…Ein analoges Lumineszenzverhalten wurde schon von anderen Gruppen beobachtet und mit einer Lumineszenz in Verbindung mit Mangan in Zusammenhang gebracht (siehe Tabelle 2.5 ID 36 und 37). Insbesondere Karel et al [212,213,250] untersuchten die spektralen Eigenschaften ihrer Proben für verschiedene Temperaturen (hauptsächlich oberhalb Raumtemperatur, nur zwei Messungen unterhalb), an welche in dieser Arbeit weiter angeknüpft wird. Zur besseren Vergleichbarkeit sind in allen Darstellungen die Intensitäten auf den Maximalwert normiert.…”
Section: Mangan-spezifische Lumineszenzunclassified