Phonon spectrum ofZnAl2O4spinel from inelastic neutron scattering and first-principles calculations

Abstract

published version features the final layout of the paper including the volume, issue and page numbers. Link to publication General rightsCopyright and moral rights for the publications made accessible in the public portal are retained by the authors and/or other copyright owners and it is a condition of accessing publications that users recognise and abide by the legal requirements associated with these rights.• Users may download and print one copy of any publication from the public portal for the purpose of private study or research. • You may not further distribute the material or use it for any profit-making activity or commercial gain • You may freely distribute the URL identifying the publication in the public portal.If the publication is distributed under the terms of Article 25fa of the Dutch Copyright Act, indicated by the "Taverne" license above, please follow below link for the End User

Lattice dynamics of ZnAl2O4 and ZnGa2O4 under high pressure

“…The main difference between the two compounds is due to the fact that Ga atoms are heavier than Al atoms. In the case of ZnAl 2 O 4 we found a good agreement with the phonon spectrum and PDOS calculated in [24].…”

Raman microscopy study of synthetic cobalt blue spinels used in the field of art

“…ZnO). Although no group assignment is made for these bands, the feature at 658 cm −1 could be related to gahnite (ZnAl 2 O 4 ), which has been reported [23,40] to have an intense Raman band at 658 cm −1 as well as other less intense bands at 758 (vw), 708 (w), 620 (w), 509 (vw), 417 and 196 (vw) cm −1 (Table 1). Our assumption is that the present Zn/Co/Al spinel pigments actually correspond to a solid solution with the two end-members wileyonlinelibrary.com/journal/jrs The Raman spectra acquired from these four pigments showed very variable relative intensities regarding the main bands located at 775, 668 and 633 cm −1 (Fig.…”

Investigation of the free charge carrier properties at the ZnO‐sapphire interface in a‐plane ZnO films studied by generalized infrared ellipsometry

“…at the interface between ZnO films and r-plane sapphire substrate [16] as well as for ZnO nanowires which have been coated with Al 2 O 3 [17]. However, in the ellipsometric spectra taken from our samples, no structures could be found at the expected ZnAl 2 O 4 phonon frequencies [18]. Responsible for this finding can be firstly, that the thickness of the ZnAl 2 O 4 layer is to small in order to be detected by means of gIRSE, secondly, that this film is highly amorphous, or thirdly, the absence of such a layer.…”