Phonon scattering in chemical-vapor-deposited diamond

Graebner, J. E.; Reiss, ME; Seibles, L.; Hartnett, T.; Miller, R.J.; Robinson, C. Jane

doi:10.1103/physrevb.50.3702

Cited by 148 publications

(90 citation statements)

References 43 publications

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“…[4,8] This is achieved by directly growing diamond films on the devices, which results in polycrystalline diamond films rather than single crystal 10 diamond. However, while the thermal conductivity of polycrystalline diamond may reach values close to that of the single crystal diamond, [11] the thermal transport near its near nucleation site may be much lower due the small grain size and the accumulation of defects in this region. [12,13] Two strategies for combining diamond with the devices using the direct growth approach have 15 emerged in the recent years, , namely, either by substituting the SiC or Si substrate, [1,3,4,5] or by growing the diamond films on top of the device passivation layer.…”

Section: Introductionmentioning

confidence: 99%

“…A few inconsistent results are available in the literature about the in-plane thermal transport in the first microns of polycrystalline diamond showing values ranging from a few W/mK up to 800 W/mK for layers thicknesses below 2 µm. [13,14,15,16,17,18,19,20,21,22,23, 24] Also 25 a strong inhomogeneity of the in-plane thermal conductivity through the diamond films has been reported, [11,12,21,22,24] although mostly for films larger 2 than a few micrometer thickness, due to challenges in measuring the thermal properties of very thin diamond films. Therefore a clear description of the heat transport in the complex near nucleation region of polycrystalline diamond is 30 still lacking.…”

Section: Introductionmentioning

confidence: 99%

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Control of the in-plane thermal conductivity of ultra-thin nanocrystalline diamond films through the grain and grain boundary properties

et al. 2016

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The in-plane thermal conductivity of polycrystalline diamond near its nucleation site, which is a key parameter to an efficient integration of diamond in modern high power AlGaN/GaN high electron mobility devices, has been studied. By controlling the lateral grain size evolution through the diamond growth conditions it has been possible to increase the in-plane thermal conductivity of the polycrystalline diamond film for a given thickness. Besides, the in-plane thermal conductivity has been found strongly inhomogeneous across the diamond films, being also possible to control this inhomogeneity by the growth conditions. The experimental results has been explained through a combined effect of the phonon mean free path confinement due the grain size and the quality of the grain/grain interfaces, showing that both effects evolve with the grain expansion and are dependant on the diamond growth conditions. This analysis shows how the thermal transport in the near nucleation region of polycrystalline diamond can be controlled, which ultimately opens the door to create ultra-thin layers with a engineered thermal conductivity, ranging from a few W/mK to a few hundreds of W/mK.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Control of the in-plane thermal conductivity of ultra-thin nanocrystalline diamond films through the grain and grain boundary properties

et al. 2016

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“…15 However, it is known that the abundance of grain boundaries, and therefore, the grain size, can reduce dramatically its thermal conductivity. [16][17][18] The average distance phonons travel between scattering events (MFP) in the bulk diamond lattice is very large, being $80% of the heat carried by phonons with MFPs greater than 200 nm at room temperature, 19 making the role of the grain boundaries especially critical near the nucleation region.…”

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confidence: 99%

Thermal conductivity of ultrathin nano-crystalline diamond films determined by Raman thermography assisted by silicon nanowires

Anaya

Rossi

Alomari

et al. 2015

Applied Physics Letters

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The thermal transport in polycrystalline diamond films near its nucleation region is still not well understood. Here, a steady-state technique to determine the thermal transport within the nano-crystalline diamond present at their nucleation site has been demonstrated. Taking advantage of silicon nanowires as surface temperature nano-sensors, and using Raman Thermography, the in-plane and cross-plane components of the thermal conductivity of ultra-thin diamond layers and their thermal barrier to the Si substrate were determined. Both components of the thermal conductivity of the nano-crystalline diamond were found to be well below the values of polycrystalline bulk diamond, with a cross-plane thermal conductivity larger than the in-plane thermal conductivity. Also a depth dependence of the lateral thermal conductivity through the diamond layer was determined. The results impact the design and integration of diamond for thermal management of AlGaN/GaN high power transistors and also show the usefulness of the nanowires as accurate nano-thermometers.

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“…The reduction for T ! 0 of the grain boundary scattering power is automatically ensured if one uses for the corresponding scattering process a mean free path given by L g ¼ l g h(q), where l g is the average grain size and [12],…”

Section: Thin Diamond Filmsmentioning

confidence: 99%

Theory of Heat Transport in a Dielectric Slab and Its Applications to CVD Diamond Films

Omini

2002

phys. stat. sol. (b)

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Subject classification: 44.10+i; 66.70+f; 68.60Dv; S5The problem of heat transport across a slab of dielectric material is treated within the frame of a model where the phonon scattering processes are described in terms of mean free paths. The conservation of the phonon flux through any plane parallel to the slab, as required for any frequency by the assumption that the above processes are elastic, leads to an integral equation which is solved through a variational procedure. The result is a general formula for the corresponding thermal conductivity k ? , which can thus be studied as a function of the slab thickness. The theory is helpful when discussing size effects for the thermal conductivity of CVD diamond films. These effects are particularly important in the part of the conductivity curve which contains information on phonon scattering by grain boundaries: as a consequence, the formula for k ? could be used to extract, from low temperatures measurements of this parameter, the frequency dependence of the grain boundary scattering rate.

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Phonon scattering in chemical-vapor-deposited diamond

Cited by 148 publications

References 43 publications

Control of the in-plane thermal conductivity of ultra-thin nanocrystalline diamond films through the grain and grain boundary properties

Control of the in-plane thermal conductivity of ultra-thin nanocrystalline diamond films through the grain and grain boundary properties

Thermal conductivity of ultrathin nano-crystalline diamond films determined by Raman thermography assisted by silicon nanowires

Theory of Heat Transport in a Dielectric Slab and Its Applications to CVD Diamond Films

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