Phonon Scattering Effects in Drain-Current Model of Carbon Nanotube and Silicon Nanowire Field-Effect Transistors

Chin, Huei Chaeng; Lim, Cheng Siong; Tan, Michael Loong Peng

doi:10.1166/sam.2016.2687

Cited by 4 publications

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“…We have selected other published works on low-dimensional FETs to fairly assess the device performance of the proposed AlSi 3 FET. The selected published models include co-decorated SiNR FET [ 21 ], 27-ASiNR FET [ 20 ], Si nanowire (SiNW) FET [ 34 ], Si thin sheet FET [ 35 ], carbon nanotube (CNT) FET [ 36 ], graphene nanoribbon (GNR) FET [ 37 ], black phosphorene (BP) FET [ 38 ], and monolayer molybdenum disulfide (MoS 2 ) FET [ 39 ]. To concisely compare the device performance metrics, the comparisons are presented as bar graphs as shown in Fig 6 .…”

Section: Performances Analysis and Discussionmentioning

confidence: 99%

Device performances analysis of p-type doped silicene-based field effect transistor using SPICE-compatible model

et al. 2022

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Moore’s Law is approaching its end as transistors are scaled down to tens or few atoms per device, researchers are actively seeking for alternative approaches to leverage more-than-Moore nanoelectronics. Substituting the channel material of a field-effect transistors (FET) with silicene is foreseen as a viable approach for future transistor applications. In this study, we proposed a SPICE-compatible model for p-type (Aluminium) uniformly doped silicene FET for digital switching applications. The performance of the proposed device is benchmarked with various low-dimensional FETs in terms of their on-to-off current ratio, subthreshold swing and drain-induced barrier lowering. The results show that the proposed p-type silicene FET is comparable to most of the selected low-dimensional FET models. With its decent performance, the proposed SPICE-compatible model should be extended to the circuit-level simulation and beyond in future work.

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Section: Performances Analysis and Discussionmentioning

confidence: 99%

Device performances analysis of p-type doped silicene-based field effect transistor using SPICE-compatible model

et al. 2022

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“…However, the scaling of silicon (Si) complementary metal-oxide-semiconductor (CMOS) technology is expected to face its fundamental limit as it enters the sub-10 nm scaling regime [2,3]. To leverage these shortcomings, various innovations involving feld-efect transistors (FETs), such as the tunnelling FETs (TFETs) [4], nanowire FETs (NWFETs) [5], multibridge-channel FETs (MBCFETs) [6], and two-dimensional (2D) FETs, have been actively developed and studied. Interestingly, 2D material-based FETs have been listed as the potential candidates for further transistor miniaturisation in the International Roadmap for Devices and Systems (IRDS) [7].…”

Section: Introductionmentioning

confidence: 99%

Device Performance of Double-Gate Schottky-Barrier Graphene Nanoribbon Field-Effect Transistors with Physical Scaling

Chuan

Misnon

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et al. 2023

Journal of Nanotechnology

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Moore’s law is approaching its limit due to various challenges, especially the size limit of the transistors. The International Roadmap for Devices and Systems (IRDS), the successor of International Technology Roadmap for Semiconductors (ITRS), has included 2D materials as an alternative approach for the More-than-Moore nanoelectronic applications. Among the 2D materials, graphene nanoribbons (GNRs) have been widely used as the alternative channel materials of field-effect transistors (FETs). In this paper, the impacts of physical scaling on the device performance of double-gate Schottky-barrier GNR FETs (DG-SB-GNRFETs) are investigated by using NanoTCAD ViDES simulation tool based on the tight-binding Hamiltonian and self-consistent solutions of 3D Poisson and Schrödinger equations with open boundary conditions within the nonequilibrium Green’s function formalism. The extracted device performance parameters include the subthreshold swing and on-to-off current ratio. The results suggest that the performances of DG-SB-GNRFETs are strongly dependent on their physical parameters, especially the widths of the GNRs.

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Impact of phonon scattering mechanisms on the performance of silicene nanoribbon field-effect transistors

et al. 2021

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Phonon Scattering Effects in Drain-Current Model of Carbon Nanotube and Silicon Nanowire Field-Effect Transistors

Cited by 4 publications

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Device performances analysis of p-type doped silicene-based field effect transistor using SPICE-compatible model

Device performances analysis of p-type doped silicene-based field effect transistor using SPICE-compatible model

Device Performance of Double-Gate Schottky-Barrier Graphene Nanoribbon Field-Effect Transistors with Physical Scaling

Impact of phonon scattering mechanisms on the performance of silicene nanoribbon field-effect transistors

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