Solution-processed CuInSe
2
films have generally
relied
on sulfide or sulfoselenide precursor films that, during the grain
growth process, hamper the growth of thicker films and lead to the
formation of a fine-grain layer. However, recent research has indicated
that sulfur reduction in the precursor film modifies the grain growth
mechanism and may enable the fabrication of thicker absorbers that
are free of any fine-grain layer. In this work, we pursue direct solution
deposition of sulfur-free CuInSe
2
films from the molecular
precursor approach. To this end, we tune the amine–thiol reactive
solvent system and study the changes to the resulting soluble complexes
through a combination of analytical techniques. We show that by reactively
dissolving indium(III) selenide and selenium in solutions of
n
-butylamine and 1,2-ethanedithiol, a metal thiolate species
is formed, and that this metal thiolate can be modified by isolation
from the thiol-containing solvent via precipitation. As the quantity
of selenium in the ink increases, the thiol content in the complex
decreases, eventually producing soluble [InSe
x
]
−
species. Extending this method to be used
with copper selenide as a copper source, molecular precursor inks
can be made for solution-processed, sulfur-free CuInSe
2
films. We then show that these CuInSe
2
precursor films
can be fully coarsened without a fine-grain layer formation, even
at the desired thicknesses of 2 μm and greater.