Phonon Properties and Low Thermal Conductivity of Phase Change Material with Superlattice-Like Structure

Long, Pengyu; Tong, Hao; Miao, Xiangshui

doi:10.1143/apex.5.031201

Cited by 12 publications

(12 citation statements)

References 19 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…This was attributed to an improved thermal energy management in such devices. Another approach to reduce the power consumption is the use of super‐lattices (SLs) as active materials . Chong et al ascribed this reduction to an improved heat management in SL‐based devices and Tong et al further support this picture thanks to thermal conductivity measurements using the 3ω method on SL chalcogenide materials, compared to some bulk materials.…”

mentioning

confidence: 99%

Evidence for Thermal‐Based Transition in Super‐Lattice Phase Change Memory

Boniardi

Boschker

Momand

et al. 2019

Physica Rapid Research Ltrs

View full text Add to dashboard Cite

Phase change memory (PCM) device physics comprehension represents an important chapter of future development of the PCM‐based architectures and their placement into the storage class memory (SCM) segment of the memory hierarchy. Here, a reduction of SET and RESET currents by more than 60% with respect to conventional GeTe–Sb2Te3 (GST) alloys is demonstrated by using phase change memory cells containing (GeTe–Sb2Te3)/Sb2Te3 super‐lattices (SL). Further, it is demonstrated that our SL PCM devices have similar characteristics in terms of the memory transition as conventional memory cells based on GST, even though showing reduced power consumption, indicative of an efficiency augmented SET‐to‐RESET transition. The reduced power consumption may be attributed to an increased thermal resistance of the SL with respect to the bulk GST alloy. This demonstrates that it is possible to engineer PCM with enhanced performance by employing SL structures, enlarging the possibility of employing SL as SCM players.

show abstract

mentioning

confidence: 99%

Evidence for Thermal‐Based Transition in Super‐Lattice Phase Change Memory

Boniardi

Boschker

Momand

et al. 2019

Physica Rapid Research Ltrs

View full text Add to dashboard Cite

show abstract

“…Nanostructures positively impact the physical properties of PCMs with respect to the single crystal analogues. Within this framework, “superlattice-like” chalcogenides have been developed, where nano-scale GeTe and Sb 2 Te 3 units are alternatively deposited at room temperature18192021. They are shown to switch between a polycrystalline and an amorphous phase and to operate with lower power threshold and faster switching time.…”

mentioning

confidence: 99%

“…They are shown to switch between a polycrystalline and an amorphous phase and to operate with lower power threshold and faster switching time. Indeed, such stacking layout might cause a reduction of thermal transport, which enables a higher temperature raise for the same absorbed power18192021. Recently, by increasing the deposition temperature (~250 °C) and by reducing the GeTe sublayer thickness (down to 1 nm), interfacial PCMs (iPCMs) have been designed22.…”

mentioning

confidence: 99%

Revisiting the Local Structure in Ge-Sb-Te based Chalcogenide Superlattices

Casarin

Caretta

Momand

et al. 2016

Sci Rep

View full text Add to dashboard Cite

The technological success of phase-change materials in the field of data storage and functional systems stems from their distinctive electronic and structural peculiarities on the nanoscale. Recently, superlattice structures have been demonstrated to dramatically improve the optical and electrical performances of these chalcogenide based phase-change materials. In this perspective, unravelling the atomistic structure that originates the improvements in switching time and switching energy is paramount in order to design nanoscale structures with even enhanced functional properties. This study reveals a high-resolution atomistic insight of the [GeTe/Sb 2 Te 3 ] interfacial structure by means of Extended X-Ray Absorption Fine Structure spectroscopy and Transmission Electron Microscopy. Based on our results we propose a consistent novel structure for this kind of chalcogenide superlattices.The need for fast and efficient management of information stimulates research on materials that can be switched on nanometer length scales and sub-nanosecond time scales. Phase-Change materials (PCMs) possess a unique property portfolio, which is ideally suited for memory device applications [1][2][3][4][5][6] . A PCM is identified by its ability of switching rapidly and reversibly between a crystalline and an amorphous state, where the amorphous state is obtained by melting the crystalline state followed by rapid quenching. These two states significantly differ in their properties, such as the optical reflectivity as well as the electrical conductivity. The phase transformation is in general triggered by thermal heating, or by either electrical and optical pulses of different time duration and amplitude. The large contrast in reflectivity between these two states lays at the base of already working PCM-based optical rewritable media devices-like DVDs or Blu-Ray Disc-where information is encoded as amorphous marks in a crystalline background. The contrast in resistivity could be exploited in the next generation of electronic solid-state memories based on PCMs, which might replace the current leading storage technologies, namely FLASH and magnetic disks. Furthermore, these materials could be employed in displays or data visualization applications by combining both their optical and electronic property modulations 7 . Hence, a lot of interest and effort is currently devoted to uncover the complex physical origin of the high contrast between the two phases [8][9][10]

show abstract

“…From this perspective, SLL Si/Sb thin films possess better reliability of the resistance state to meet the application of data storage at elevated temperature. The thermal conductivity of the phase-change film has a great influence on the power consumption of PCM cells [23]. In this study, scanning probe microscopy (SPM) was used to investigate microstructures and local thermal conductivity properties of various materials and devices in nanoscale [24].…”

mentioning

confidence: 99%

Si/Sb superlattice-like thin films for ultrafast and low power phase change memory application

Zhu

Zou

et al. 2016

Scripta Materialia

View full text Add to dashboard Cite

After compositing with Si, the superlattice-like (SLL) Si/Sb thin film had higher crystallization temperature (~231 o C), larger crystallization activation energy (2.95 eV), and better data retention ability (126 o C for 10 years). The crystallization of Sb in SLL Si/Sb thin films was restrained by the multilayer interfaces. The reversible resistance transition could be achieved by an electric pulse as short as 10 ns for [Si(22nm)/Sb(2nm)] 2-based PCM cell. A lower operation power consumption of 0.02 mW and a good endurance of 1.0×10 5 cycles was achieved. In addition, SLL [Si(22nm)/Sb(2nm)] 2 thin film showed a low thermal conductivity of 0.11 W/(m•K).

show abstract

Phonon Properties and Low Thermal Conductivity of Phase Change Material with Superlattice-Like Structure

Cited by 12 publications

References 19 publications

Evidence for Thermal‐Based Transition in Super‐Lattice Phase Change Memory

Evidence for Thermal‐Based Transition in Super‐Lattice Phase Change Memory

Revisiting the Local Structure in Ge-Sb-Te based Chalcogenide Superlattices

Si/Sb superlattice-like thin films for ultrafast and low power phase change memory application

Contact Info

Product

Resources

About