Phonon mechanism of mobility equilibrium fluctuation and properties of 1/f-noise

Low-Frequency Noise Spectroscopy at Nanoscale: Carbon Nanotube Materials and Devices

“…Although it has been suggested that the 1/f -noise in bulk materials is induced by scattering with surface or/and bulk phonons (Mihaila, 2004;Gasparyan et al, 2010;Melkonyan et al, 2003Melkonyan et al, , 2005aMelkonyan et al, , 2005bMelkonyan et al, , 2006Melkonyan et al, , 2007 and the same may be true for CNTs (Gasparyan et al, 2009(Gasparyan et al, , 2011Mihaila, 2002) the agreement between SL A A and SL LL is striking and suggests that H  in CNFETs is not substantially influenced by the presence of acoustic phonon scattering in the long channel device. The noise amplitude of the CNT devices is related to the resistance of the device.…”

Hi-pass Pink Noise: Its Acoustic Features and Standard Volume

“…Types of ambient noise and change of energy spectral density are represented in Eq. (2) where α becomes 0 in direct currents and has the largest energy spectral density. (2) Frequency spectrum of pink noise naturally spreads over wide ranges and is used for input/output data in various fields.…”

“…(2) where α becomes 0 in direct currents and has the largest energy spectral density. (2) Frequency spectrum of pink noise naturally spreads over wide ranges and is used for input/output data in various fields. There is a notable difference between α being close to 1 and α being in an approximately wide range of 0<α<2.…”

“…Since pink noise has constant energy irrespective of time, we can exclude time factor from pink noise and use pink noise in audio systems or as a reference sound source for analytical purposes. Furthermore, pink noise is widely used for research purposes such as for accumulating various noises [1,2].…”

The charge carrier capture–emission process – the main source of the low-frequency noise in homogeneous semiconductors

“…The main argument against the mobility low-frequency fluctuations of free charge carriers is that there is no reliable explanation of the noise spectrum. It is believed that the 1/f noise is caused by fluctuations in the scattering cross-section due to the action of acoustic lattice waves [25,26]. Considering that the acoustic phonon lifetime in silicon is very short [27] (an average lifetime of thermal acoustic phonons is about 17 ps, and according to Ref.…”