Phonon Fine Structure in the 1/f Noise of Metals, Semiconductors and Semiconductor Devices

Mihaila, M.

doi:10.1007/3-540-45463-2_11

Cited by 9 publications

(8 citation statements)

References 51 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Herein, τ s is the mean flight time of electrons due to phonon scattering. Our results are supported by the empirical findings of Hooge, Vandamme and Kleinpenning [4], Mihaila [5] and Musha, Gabor and Minoru [6] who favored phonon scattering as the origin of 1/f noise in metals and semiconductors. A further step in this direction has been made by Hamming and coworkers [7] who modified the geometric and material design to suppress the phonon distribution.…”

Section: /F Noise In Resistorssupporting

confidence: 93%

See 1 more Smart Citation

Intermittent Phonon Scattering as a Possible Origin of 1/f Fluctuations in Metallic Resistors

Grüneis

2015

Fluct. Noise Lett.

View full text Add to dashboard Cite

We regard a metallic resistor for temperatures T Θ D (= Debye temperature); under this condition, electron-phonon scattering is the dominant scattering mechanism. We investigate the noise properties under the supposition that phonon scattering is an intermittent process. Intermissions may be caused by an interaction between different phonon modes giving rise to a short break down of a mode. Due to such an intermittent behavior, we obtain -besides thermal noise -a 1/f noise component. Under equilibrium conditions, the 1/f noise term disappears. Under an applied electric field, the electrons are accelerated between collisions resulting in an additional 1/f noise component which can be compared with Hooge's relation. The predicted Hooge coefficient is α ≈ 3 · 10 −3 (τ off /τs) 2 with τs being the mean electron phonon scattering time and τ off being the mean off-time (= intermission). We also find 1/f fluctuations in the square of thermal noise suggesting that an applied current only probes 1/f fluctuations which are already present under equilibrium conditions.

show abstract

Section: /F Noise In Resistorssupporting

confidence: 93%

“…This is also supported by Mihaila [5] who investigated surface and bulk platinum phonon energies. A key experiment was performed by Musha et al [6] who observed the scattering of laser light by phonons in quartz exhibiting 1/f fluctuations in the number of phonons.…”

Section: Introductionmentioning

confidence: 74%

Intermittent Phonon Scattering as a Possible Origin of 1/f Fluctuations in Metallic Resistors

Grüneis

2015

Fluct. Noise Lett.

View full text Add to dashboard Cite

show abstract

“…Figure . 1 shows that the dominant PDOS peaks feature almost the same intensity, while the intensity of their noise counterparts is quite different. This indicates that besides F (ω), there is another factor involved in the noise intensity control, which, as stated previously [36,40,41,44], could be the carrier-phonon coupling matrix element. This interaction should depend on the nature of the atoms the carriers interact with.…”

supporting

confidence: 64%

“…In fact, such a structure in the 1/f noise intensity or α is quite common, for it has been so far observed in many other solid-state physical systems, such as bipolar [31] and MOS transistors [32], metallic point contacts [33,34] , metal films [35,36], quartz crystals [37], carbon nanotubes [38], carbon soot [39,40], metal nanowires [41] or, as predicted [39], single molecule [42,43]. As for its microscopic origin, the structure in α was found to mirror the van Hove singularities in either phonon density of states (PDOS), α ≈ F (ω), or the Eliashberg function: α ≈ g 2 (ω)F (ω), where g 2 (ω) is the electron-phonon matrix element and ω is the phonon frequency [36,40,41,44]. In this work, we show that the noise structure observed by Islam et al [14] in (Bi,Sb) 2 Te 3 and Biswas et al [17] in BiSbTeSe 1.…”

mentioning

confidence: 95%

Image of phonon spectrum in the 1/f noise of semiconductors

Mihaila

CAS '99 Proceedings. 1999 International Semiconductor Conference (Cat. No.99TH8389)

View full text Add to dashboard Cite

features noise peaks which develop at some specific temperatures. We compared this noise structure with either phonon density of states or Raman spectrum of each topological insulator (TI), respectively. In (BiSb)2Te3, the comparison revealed that the noise peaks track the van Hove singularities in the phonon density of states. It resulted that bulk atomic oscillators are responsible for the noise peaks. The most intense noise peak observed in (BiSb)2Te3 at 50 K is attributed to the thermal motion of the Bi atoms. Other less intense noise peaks are assigned to either a single phonon mode or multi-phonon combinations. We found that thermal motions of Bi and Te 2 atoms in different symmetry directions are involved in most of the phonon combinations, which stand for the signature of the lattice anharmonicity. The noise increase observed in both (Bi,Sb)2Te3 and BiSbTeSe1.6 above a specific temperature threshold is attributed to the anharmonicity-induced strengthening of the carrier-phonon coupling. In the case of BiSbTeSe1.6, we show that all noise singularities are mirrored in the Raman spectrum of a structurally close TI (BiSbTeSe2) in the whole temperature range. This indicates that although transport can be at the surface or in the bulk or both of them, the carrier-phonon interaction is the only source of 1/f fluctuations in TIs. Inherently, these results imply that microscopic origin of 1/f noise in solid is in the perpetual thermal motion of the atoms.For almost a century[1], 1/f noise is puzzling the scientific community with its omnipresence in solid and solidstate devices[2-7]. In the last decade, it was observed [8][9][10][11][12][13][14][15][16][17][18][19] in topological insulators (TI), which are quantum materials with metallic conductivity at the surface, while their bulk is insulating [20][21][22][23][24][25][26][27]. These properties are due to the presence of surface electronic states with a Dirac cone energy dispersion located in the bulk band gap [20][21][22][23][24][25][26][27]. These surface states are protected by inversion symmetry to backscattering, a property which opens fascinating possibilities for TIs applications in spintronics and quantum topological computing. However, the presence of the 1/f noise in the surface conduction is a factor which can lead to certain technology roadblocks in applications such as quantum computing, where it acts as source of decoherence [28,29]. Therefore, finding its origin is of great practical interest. Hossain et al. [9] suggested that the noise dominated by the surface states in TIs could be very low because the time-reversal symmetry topologically protects the surface states from backscattering. However, in Bi 2 Se 3 samples wherein the carrier transport was dominated by the surface, they found a high 1/f noise parameter (α ≈ 0.2), therefore the noise would be due to a "mixed volume-surface transport regime" [9]. Consequently, to reduce the noise level, it would be necessary to protect the surface conduction from the bulk influences. Nevertheless, in str...

show abstract

“…Over the years, the phenomenon proved to be of formidable ubiquity entailing a very complex, sometimes entangled, problematic. It has been vividly investigated, discussed and disputed in literature and throughout reviewed by experts in the field [1].…”

Section: Introductionmentioning

confidence: 99%

Investigation of 1/f Noise of p-type CdTe Detectors

Andreev

Grmela

2007

2007 30th International Spring Seminar on Electronics Technology (ISSE)

View full text Add to dashboard Cite

This paper presents the results ofexperimental studies oftransport and noise characteristics of CdTe single crystals. Though no universal mechanism has been identifiedforflicker noise or If noise, it is the most ubiquitous form of noise in nature. Phenomena that have no obvious connection like heartbeat, cell membrane potential, financial data, DNA sequences and transistors exhibit fluctuations with a 1/fcharacter. As the term "If" suggests, a spectral density that increases without limit as frequency decreases, characterizes this kind ofnoise. Flicker noise in the CdTe single crystals was studied. Two CdTe detectors were used; both have p-type conductivity. One of them has lowohmic contacts (F33B8), another one have high-ohmic contact (452D).

show abstract

Phonon Fine Structure in the 1/f Noise of Metals, Semiconductors and Semiconductor Devices

Cited by 9 publications

References 51 publications

Intermittent Phonon Scattering as a Possible Origin of 1/f Fluctuations in Metallic Resistors

Intermittent Phonon Scattering as a Possible Origin of 1/f Fluctuations in Metallic Resistors

Image of phonon spectrum in the 1/f noise of semiconductors

Investigation of 1/f Noise of p-type CdTe Detectors

Contact Info

Product

Resources

About