Phonon engineering significantly reducing thermal conductivity of thermoelectric materials: a review

Zhou, Chen; Liang, Bo; Huang, Wenjie; Noudem, Jacques-Guillaume; Tan, Xiaojian; Jiang, Jun

doi:10.1007/s12598-023-02302-3

Cited by 17 publications

(7 citation statements)

References 115 publications

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“…Several strategies have been implemented to improve TE performance ( ZT ), with a particular emphasis on reducing k L by decoupling the electron and phonon transport. 98–100 This includes hierarchical architectures, 67–69 band structure engineering, 16,101 nano-structuring, 102–105 energy filtering, 106–108 and exploring materials possessing intrinsically low k . 11 A recent addition to the array of promising strategies is the high-entropy approach, which has garnered significant attention in solving the interdependence of TE properties.…”

Section: Fundamentals Of Thermoelectricitymentioning

confidence: 99%

High-entropy materials for thermoelectric applications: towards performance and reliability

Oueldna,

Sabi,

Aziam

et al. 2024

Mater. Horiz.

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Section: Fundamentals Of Thermoelectricitymentioning

confidence: 99%

High-entropy materials for thermoelectric applications: towards performance and reliability

Oueldna,

Sabi,

Aziam

et al. 2024

Mater. Horiz.

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“…Specifically, it includes the optimization of carrier concentration, enhancement of Seebeck coefficient using energy band engineering, 10,11 and enhancement of phonon scattering to reduce lattice thermal conductivity. 12 Sn self-compensation and Sb doping can regulate the carrier concentration, 13,14 and the introduction of Cd, Mg, and Mn in SnTe material can effectively realize the convergence of the valence band and improve the Seebeck coefficient significantly. 14−16 Misra et al found that Sn 1.03 Te doped with In introduced a narrow and sharp peak in the density of states.…”

Section: Introductionmentioning

confidence: 99%

“…Energy band engineering and defect engineering are two common approaches to coordinate electron and phonon transport in thermoelectric materials. Specifically, it includes the optimization of carrier concentration, enhancement of Seebeck coefficient using energy band engineering, , and enhancement of phonon scattering to reduce lattice thermal conductivity …”

Section: Introductionmentioning

confidence: 99%

Preparation of High-Performance Mn-Doped SnTe Materials at High Pressure and High Temperature

Liu,

Guo,

Deng

2024

Inorg. Chem.

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SnTe is an environmentally friendly medium-temperature thermoelectric material, but its inherent low power factor (PF) and high lattice thermal conductivity severely limit its application. In this study, based on the fact that Mn doping can induce band convergence, the high-pressure and high-temperature (HPHT) synthesis method was used to optimize the sample preparation and shorten the synthesis cycle to 30 min. The results show that the Sn 0.93 Mn 0.10 Te sample achieves the maximum PF value of 34.00 μW cm −1 K −2 at 775 K and PF ave value of 21.36 μW cm −1 K −2 between 300−875 K. Microstructure analysis shows that the highpressure synthesis method introduces abundant grain boundaries, various grain sizes, multiple defects, and pore structures into the sample. These microscopic crystal structures can effectively scatter phonons and lower the lattice thermal conductivity. The modification of these micromorphologies results in the Sn 0.92 Mn 0.11 Te sample attaining a minimum lattice thermal conductivity of 0.45 W m −1 K −1 at 625 K. The thermoelectric figure of merit (zT) of sample Sn 0.92 Mn 0.11 Te reaches a maximum value of 1.1 at 775 K, and the zT ave reaches 0.63 in the range of 300−875 K. This study indicates that the synergistic effect of Mn element doping and microstructure modification can effectively optimize the thermoelectric transport performance of SnTe materials.

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“…Thermal management materials are widely applied in the fields of electronic devices, optoelectronic devices, and thermoelectric devices, where they control the dispersion, storage, and conversion of heat within a system, − for example, thermal switches, heat sinks, , and other devices. Exploring the thermal transport properties of thermal management materials is critical for both material application and device design. − In particular, the extremely low lattice thermal conductivity (κ l ) of materials has garnered significant attention in the research community. , After decades of efforts, the κ l of materials are controlled to 0.5–2 W/mK at room temperature, − such as bulk Au 2 S exhibits κ l of 1.99 W/mK, the κ l of penta-Sb 2 C is 0.88 W/mK, the κ l of two-dimensional tellurene is merely 0.61 W/mK . These materials show significant potential for applications in thermoelectric devices and engineering thermal management.…”

Section: Introductionmentioning

confidence: 99%

First-Principles Study on the Thermal Transport Properties of Monolayer 1T-Ag₆X₂ (X = S, Se, Te)

He,

Wei,

Gan

et al. 2024

J. Phys. Chem. C

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Cluster substitution is a novel strategy for optimizing the physical and chemical properties of functional materials, but it is not fully understood in related fields, especially in the fields of thermoelectricity and engineering of thermal management. The monolayer 1T-Ag 6 X 2 (X = S, Se, Te) is obtained by substituting the transition metal atoms in traditional twodimensional transition metal sulfides (TMDs) with octahedral cluster Ag 6 . The phonon dispersion curves and ab initio molecular dynamics (AIMD) results show that monolayers 1T-Ag 6 S 2 and 1T-Ag 6 Se 2 have reliable stability. Therefore, the thermal transport performance of monolayers 1T-Ag 6 S 2 and 1T-Ag 6 Se 2 is studied systematically based on first principles. The results show that monolayers 1T-Ag 6 S 2 and 1T-Ag 6 Se 2 both have extremely low lattice thermal conductivity κ l , 0.27 and 0.30 W/mK at room temperature, respectively, which are much lower than those of twodimensional 1T-MX 2 and other two-dimensional materials. This is because, after the introduction of Ag 6 clusters, monolayers 1T-Ag 6 S 2 and 1T-Ag 6 Se 2 have more complex structures than traditional TMDs, with more tortuous phonon paths and greater phonon anharmonicity. It is also interesting to note that the contribution of optical and acoustic phonon modes to the total κ l of monolayers 1T-Ag 6 S 2 and 1T-Ag 6 Se 2 is similar (usually, the κ l of most two-dimensional materials is dominated by the acoustic component), which makes a reasonable explanation for the extremely low κ l of these two materials. In this study, we further understand the important role of cluster substitution in regulating the thermal transport properties of two-dimensional materials and provide research ideas for designing new two-dimensional materials with low κ l .

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Phonon engineering significantly reducing thermal conductivity of thermoelectric materials: a review

Cited by 17 publications

References 115 publications

High-entropy materials for thermoelectric applications: towards performance and reliability

High-entropy materials for thermoelectric applications: towards performance and reliability

Preparation of High-Performance Mn-Doped SnTe Materials at High Pressure and High Temperature

First-Principles Study on the Thermal Transport Properties of Monolayer 1T-Ag₆X₂ (X = S, Se, Te)

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Phonon engineering significantly reducing thermal conductivity of thermoelectric materials: a review

Cited by 17 publications

References 115 publications

High-entropy materials for thermoelectric applications: towards performance and reliability

High-entropy materials for thermoelectric applications: towards performance and reliability

Preparation of High-Performance Mn-Doped SnTe Materials at High Pressure and High Temperature

First-Principles Study on the Thermal Transport Properties of Monolayer 1T-Ag6X2 (X = S, Se, Te)

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Product

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First-Principles Study on the Thermal Transport Properties of Monolayer 1T-Ag₆X₂ (X = S, Se, Te)