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Okuyama, Y.; Tokuda, Naoki

doi:10.1103/physrevb.42.7078

Cited by 9 publications

(3 citation statements)

References 36 publications

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“…We note that, employing the unscreened form for the deformation potential with the appropriate parameter Ξ, good agreement between theory and experiments has been reached in a previous study on phonon-drag thermoelectric effect. 44 In our numerical calculations, the parameters are chosen as follows: κ = 12.9, d = 5.31 g/cm 3 , u sl = 5.29 × 10 3 m/s, u st = 2.48×10 3 m/s, Ξ = 8.5 eV, m * = 0.067m 0 (m 0 is free electron mass), e 14 = 1.41 × 10 9 V/m. Since we are interested in the temperature and electron-density dependencies of the diffusion and phonon-drag TEPs at low temperature (T ≤ 5 K), the relaxation of phonons due to phonon-phonon scattering can be ignored and only the temperature-independent boundary scattering need be considered.…”

Section: Resultsmentioning

confidence: 99%

“…with τ bs as the relaxation time due to boundary scattering, 1/τ bs = u Qλ /Λ, 44 and τ pp as the relaxation time due to phonon-phonon scattering, 1/τ pp = A λ T 3 Ω 2 Qλ . 67,68 ∂N Qλ ∂t ep is the phonon scattering rate due to the electron-phonon interaction, as given by…”

Section: A Electron and Phonon Boltzmann Equationsmentioning

confidence: 99%

“…At relatively low tem-perature, the diffusion process in the Seebeck effect has been expected to be dominant since the electron-phonon scattering is relatively weak. [13][14][15][16]18 However, a careful analysis of experimental data indicates that phonon-drag in 2DEGs also plays an important role even at temperature T < 10 K. 17,19,20,[36][37][38][39][40][41]43,44,50 Furthermore, there have also been studies of a sign change of diffusion TEP in a Si-MOSFET, 45,46 and of the effects of weak localization on TEP, 26,28,31 as well as the TEP of compositefermions, 21,23,24,33,49,[52][53][54] and oscillation of TEP in low magnetic field, 27,29,30 etc.…”

Section: Introductionmentioning

confidence: 99%

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Seebeck effect in dilute two-dimensional electron systems: temperature dependencies of diffusion and phonon-drag thermoelectric powers

Liu,

Lei,

Horing

2011

Preprint

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Considering screeening of electron scattering interactions in terms of the finite-temperature STLS theory and solving the linearized Boltzmann equation (with no appeal to a relaxation time approximation), we present a theoretical analysis of the low-temperature Seebeck effect in two-dimensional semiconductors with dilute electron densities. We find that the temperature (T ) dependencies of the diffusion and phonon-drag thermoelectric powers (S d and Sg) can no longer be described by the conventional simple power-laws. As temperature increases, |S d |/T decreases when T 0.1εF (εF is the Fermi energy), while |Sg| first increases and then falls, resulting a peak located at a temperature between Bloch-Grüneisen temperature and εF .

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Section: Resultsmentioning

confidence: 99%

Section: A Electron and Phonon Boltzmann Equationsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Seebeck effect in dilute two-dimensional electron systems: temperature dependencies of diffusion and phonon-drag thermoelectric powers

Liu,

Lei,

Horing

2011

Preprint

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Geometry Effects on the Phonon-Drag Contribution to Thermopower in a Coupled-Quantum-Well System at Low Temperature

2015

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The effects of geometry on the phonon-drag contribution to thermopower in a coupled-quantum-well system at low temperature are theoretically investigated. It is shown that increasing the separation between two quantum wells up to a certain limit enhances the phonon-drag thermopower over the whole temperature range of interest. Moreover, calculations suggest that the effect of layers' thickness on the phonon drag is temperature dependent. The effect of spatial asymmetry, which turns out to be a very small one, is studied as well. Calculations based on the Fang-Howard model for the quantum wells are presented and compared with both experiment and results obtained from the infinitely deep quantum well model.

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