PHONON-DRAG EFFECT OF ULTRA-THIN FeSi2 AND MnSi1.7/FeSi2 FILMS

Hou, Q. R.; Gu, B. F.; Chen, Y. B.; He, Ye

doi:10.1142/s0217984911027078

Cited by 6 publications

(3 citation statements)

References 27 publications

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“…1). This type of size-dependent shift in the Seebeck peak is one of the characteristics of the phonon-drag dominated systems, as pointed out previously [18,19,20].…”

Section: Resultssupporting

confidence: 68%

Phonon drag effect in nanocomposite FeSb2

et al. 2013

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We study the temperature dependence of thermoelectric transport properties of four FeSb 2 nanocomposite samples with different grain sizes. The comparison of the single crystals and nanocomposites of varying grain size indicates the presence of substantial phonon drag effects in this system contributing to a large Seebeck coefficient at low temperature. As the grain size decreases, the increased phonon scattering at the grain boundaries leads to a suppression of the phonon-drag effect, resulting in a much smaller peak value of the Seebeck coefficient in the nanostructured bulk materials. As a consequence, the ZT values are not improved significantly even though the thermal conductivity is drastically reduced.

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“…1). This type of size-dependent shift in the Seebeck peak is one of the characteristics of the phonon-drag dominated systems, as pointed out previously [18,19,20].…”

Section: Resultssupporting

confidence: 68%

Phonon drag effect in nanocomposite FeSb2

et al. 2013

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“…Similarly, the peak in the Seebeck coefficients for the flux-grown single crystal is also larger than the powder sample (prepared from the flux-grown sample) by a factor of ≈ 30. Such features have been observed in other semiconductors including single crystals of Ge, 59 Si 60 and CrSb 2 , 14 nano-composite FeSb 2 , 8 reduced TiO 2 , 61,62 ultra-thin films of FeSi 2 and MnSi 1.7 /FeSi 2 , 63 which have subsequently been demonstrated to arise from phonondrag effects. Phonon drag can be defined as the effect arising from a preferential scattering of the charge carriers by the phonons in the direction of the flow (i.e., the drag on the charge carriers exerted by the phonons streaming from hot to cold end in thermal conduction) and mostly evidenced at low temperatures.…”

Section: E Phonon-drag Mechanismmentioning

confidence: 70%

Phonon-drag effect inFeGa3

et al. 2014

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The thermoelectric properties of single-and polycrystalline FeGa3 are systematically investigated over a wide temperature range. At low temperatures, below 20 K, previously not known pronounced peaks in the thermal conductivity (400-800 W K −1 m −1 ) with corresponding maxima in the thermopower (in the order of -16000 µV K −1 ) were found in single crystalline samples. Measurements in single crystals along [100] and [001] directions indicate only a slight anisotropy in both the electrical and thermal transport. From susceptibility and heat capacity measurements, a magnetic or structural phase transition was excluded. Using density functional theory-based calculations, we have revisited the electronic structure of FeGa3 and compared the magnetic (including correlations) and non-magnetic electronic densities of states. Thermopower at fixed carrier concentrations are calculated using semi-classical Boltzmann transport theory, and the calculated results match fairly with our experimental data. The inclusion of strong electron correlations treated in a mean-field manner (by LSDA+U ) does not improve this comparison, rendering strong correlations as the sole explanation for the low temperature enhancement unlikely. Eventually, after a careful review, we assign the peaks in the thermopower as a manifestation of the phonon-drag effect, which is supported by thermopower measurements in a magnetic field.

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“…The addition of Si to the film was necessary to adjust the atomic ratio of Si to Fe to the desired value 2. The magnetron sputtering system can be found in detail in our previous reports 19,20 The base pressure of the sputtering vacuum chamber was 5.6 × 10 −4 Pa. The argon gas pressure during sputtering was 0.65 Pa.…”

Section: Introductionmentioning

confidence: 99%

MAGNETIC PROPERTIES OF Fe_0.95Co_0.05Si₂ SEMICONDUCTING FILM

et al. 2012

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The Fe 0.95 Co 0.05 Si 2 semiconducting film has been successfully grown on glass substrate by magnetron sputtering at substrate temperature of 637 K and then thermal annealing at 823 K for one hour in high vacuum. The Raman data and high Seebeck coefficient suggested that the β-Fe 0.95 Co 0.05 Si 2 semiconducting film was achieved. Room temperature ferromagnetism was observed, and the ferromagnetic phase transition was at about * Corresponding author. 1250097-1 Mod. Phys. Lett. B 2012.26. Downloaded from www.worldscientific.com by NEW YORK UNIVERSITY on 02/06/15. For personal use only. Y. P. Han et al. 380 K. The possible reason for the ferromagnetism of the β-Fe 0.95 Co 0.05 Si 2 semiconducting film was discussed.

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PHONON-DRAG EFFECT OF ULTRA-THIN FeSi₂ AND MnSi_1.7/FeSi₂ FILMS

Cited by 6 publications

References 27 publications

Phonon drag effect in nanocomposite FeSb2

Phonon drag effect in nanocomposite FeSb2

Phonon-drag effect inFeGa3

MAGNETIC PROPERTIES OF Fe_0.95Co_0.05Si₂ SEMICONDUCTING FILM

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PHONON-DRAG EFFECT OF ULTRA-THIN FeSi2 AND MnSi1.7/FeSi2 FILMS

Cited by 6 publications

References 27 publications

Phonon drag effect in nanocomposite FeSb2

Phonon drag effect in nanocomposite FeSb2

Phonon-drag effect inFeGa3

MAGNETIC PROPERTIES OF Fe0.95Co0.05Si2 SEMICONDUCTING FILM

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PHONON-DRAG EFFECT OF ULTRA-THIN FeSi₂ AND MnSi_1.7/FeSi₂ FILMS

MAGNETIC PROPERTIES OF Fe_0.95Co_0.05Si₂ SEMICONDUCTING FILM