2016
DOI: 10.1103/physrevb.94.245438
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Phonon contribution to electrical resistance of acceptor-doped single-wall carbon nanotubes assembled into transparent films

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Cited by 20 publications
(85 citation statements)
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References 54 publications
(81 reference statements)
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“…[2,3] These phenomena are commonly explained by the downshifting of the Fermi level of nanotubes into the valence band. To describe this process more completely, photoluminescence (PL) spectroscopy should be applied, but commonly used filling technique deals with films or powders of nanotubes, that makes PL studying complicated due to the fast irradiative relaxation of electronic excitations in bundles.…”
Section: Introductionmentioning
confidence: 99%
“…[2,3] These phenomena are commonly explained by the downshifting of the Fermi level of nanotubes into the valence band. To describe this process more completely, photoluminescence (PL) spectroscopy should be applied, but commonly used filling technique deals with films or powders of nanotubes, that makes PL studying complicated due to the fast irradiative relaxation of electronic excitations in bundles.…”
Section: Introductionmentioning
confidence: 99%
“…The effect of nitric acid doping is considered in infinitely long NO 3 -doped semiconducting (10,0) and metallic (8 The geometries of the primitive unit cells of (10,0) and (8,8) CNTs are first optimized with the FHI-aims code. The initial positions of the carbon atoms are computed by using the TubeGen 3.4 nanotube generator [33], and all primitive unit cells including the lattice vectors are relaxed.…”
Section: Methodology and Systemsmentioning
confidence: 99%
“…[6,35]. The k-point grid used for finding the electronic structure in the transport calculations is 1 × 1 × 27 for individual metallic (8,8) CNTs. A sparser grid is used for the transport calculations of semiconducting CNTs, but the calculations are converged despite the different grid.…”
Section: Methodology and Systemsmentioning
confidence: 99%
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