Phonon bottleneck in quantum dots: Role of lifetime of the confined optical phonons

Li, Xin-Qi; Nakayama, H.; Arakawa, Yasuhiko

doi:10.1103/physrevb.59.5069

Cited by 194 publications

(140 citation statements)

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“…The effects of confined acoustical 5 and optical phonons ͑including interface ones͒, [5][6][7][8][9][10][11][12][13][14][15] plasmons, [16][17][18] polaronlike states in QDs, 7,19,20 and the Auger-like process 21,22 have been analyzed.…”

Section: Introductionmentioning

confidence: 99%

Quantum dot energy relaxation mediated by plasmon emission in doped covalent semiconductor heterostructures

et al. 2007

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The interaction between interface plasmons within a doped substrate and quantum dot electrons or holes has been theoretically studied in double heterostructures based on covalent semiconductors. The interface plasmon modes, the corresponding dispersion relationship, and the intraband carrier relaxation rate in quantum dots are reported. We find the critical points in the interface plasmon density of states for multilayered structures results in enhanced quantum dot intraband carrier relaxation when compared to that for a single heterostructure. A detailed discussion is made of the relaxation rate and the spectral position dependencies on the quantum dot layer thickness as well as on the dopant concentration. The material system considered was a p-Si/ SiO 2 / air heterostructure with Ge quantum dots embedded in an SiO 2 layer. This structure is typical of those used in technical applications.

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Section: Introductionmentioning

confidence: 99%

Quantum dot energy relaxation mediated by plasmon emission in doped covalent semiconductor heterostructures

et al. 2007

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“…Both theoretical and experimental findings show that it may have entered the strong coupling regime [3,5,6,7], which means that an accurate description of this interaction system should be the hybridation of electron state and the phonon state, thus the polaron as a new ground state will be formed [8]. Similar conclusion can also be drawn to hole and exciton interacting with LO phonons in QD.Although Huang-Rhys parameter S and Fröhlich coupling constant α c are both related to the average number of LO phonons, while the irreversible emission of LO phonons (0.1 ∼ 1 ps) provides an efficient channel for energy relaxation [9], the formation of polaron will suppress the LO phonon contribution to the carrier decoherence process and hence leads to long polaron lifetime [5,6,7] and everlasting oscillation of survival probability [5,10,11].In experiments, far-infrared (FIR) absorption results have evidenced the formation of electron-LO [10,11], hole-LO [12] and exciton-LO[13] induced magnetopolaron in QDs under ultra-high magnetic field (up to ∼ 28 T) at about 4 K, and anticrossing between the polaron levels differing by one LO phonon[6] is found. How- * email: cfli@ustc.edu.cn ever, hampered by the large full width at half maximum (FWHM), no direct observation of excitonic polaron has yet been reported.…”

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confidence: 63%

Direct observation of excitonic polaron in InAs/GaAs quantum dots

Gong

Chen

et al. 2010

EPL

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Excitonic polaron is directly demonstrated for the first time in InAs/GaAs quantum dots with photoluminescence method. A new peak (s ′ ) below the ground state of exciton (s) comes out as the temperature varies from 4.2 K to 285 K, and a huge anticrossing energy of 31 meV between s ′ and s is observed at 225 K, which can only be explained by the formation of excitonic polaron.The results also provide a strong evidence for the invalidity of Huang-Rhys formulism in dealing with carrier-longitudinal optical phonon interaction in quantum dot. Instead, we propose a simple two-band model, and it fits the experimental data quite well. The reason for the finding of the anticrossing is also discussed.PACS numbers: 60.20. Kr, 78.67.Hc Electron-phonon interaction is a very important ingredient determining the physical properties of semiconductors, such as phonon-assisted hot carrier relaxation process [1,2], light absorption and emission process [3,4]. For electron-longitudinal optical (LO) interaction in the weak polar system (e.g., GaAs, α c = 0.067), the welldocumented Huang-Rhys model always gives good explanation in bulk material. However, in quantum dot (QD), this interaction is greatly enhanced owing to the discrete nature of energy levels with spacing comparable to the energy of LO phonon. Both theoretical and experimental findings show that it may have entered the strong coupling regime [3,5,6,7], which means that an accurate description of this interaction system should be the hybridation of electron state and the phonon state, thus the polaron as a new ground state will be formed [8]. Similar conclusion can also be drawn to hole and exciton interacting with LO phonons in QD.Although Huang-Rhys parameter S and Fröhlich coupling constant α c are both related to the average number of LO phonons, while the irreversible emission of LO phonons (0.1 ∼ 1 ps) provides an efficient channel for energy relaxation [9], the formation of polaron will suppress the LO phonon contribution to the carrier decoherence process and hence leads to long polaron lifetime [5,6,7] and everlasting oscillation of survival probability [5,10,11].In experiments, far-infrared (FIR) absorption results have evidenced the formation of electron-LO [10,11], hole-LO [12] and exciton-LO[13] induced magnetopolaron in QDs under ultra-high magnetic field (up to ∼ 28 T) at about 4 K, and anticrossing between the polaron levels differing by one LO phonon[6] is found. How- * email: cfli@ustc.edu.cn ever, hampered by the large full width at half maximum (FWHM), no direct observation of excitonic polaron has yet been reported.In this letter, as we vary the temperature from 4 K to 285 K, the FWHM of the s peak decreases sharply, thus we can directly observe the excitonic polaron without applying magnetic field. It is shown that at low temperature, the exciton-LO phonon interaction is weak and may be explained within the framework of Huang-Rhys model and enhanced S value is obtained. But at high temperature, due to the increasing of coupling strength, exciton...

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“…In the α > 0 case, the accidental electron-ion degeneracies are lifted and, in analogy with the theory of Rabi oscillations, 25,32 for small values of α one expects to observe periodic transitions among the almost degenerate electron-ion many-body states.…”

Section: Electron-ion Coherence Studied By Ceidmentioning

confidence: 99%

“…In the gas phase, atoms interact only briefly before leaving the collision region, while in condensed phases-and especially at low dimensions-multiple, periodic interactions, e.g., due to steady molecular oscillations, can build up quantum coherence between electrons and ions. 25 There is also increasing evidence that quantum electron-ion coherence can play a role in photosynthesis 26 and in the nonradiative relaxation of π -conjugated polymers, even at room temperature. 27 Recent theoretical and computational investigations by means of effective kinetic equations for the electronic degrees of freedom (DOFs) 28 have demonstrated the subtle interplay between coherent (wave-like) and incoherent (thermal diffusion) dynamics.…”

Section: Introductionmentioning

confidence: 99%

Analog of Rabi oscillations in resonant electron-ion systems

Stella

Miranda

Horsfield

et al. 2011

The Journal of Chemical Physics

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Observation of longitudinal-optic-phonon-plasmon-coupled mode in n-type AlGaN alloy films Appl. Phys. Lett. 99, 251904 (2011) Band-gap-dependent emissions from conjugated polymers coupled silver nanocap array Appl. Phys. Lett. 99, 233112 (2011) Hot carriers relaxation in highly excited polar semiconductors: Hot phonons versus phonon-plasmon coupling J. Appl. Phys. 110, 113108 (2011) Strain control of orbital polarization and correlated metal-insulator transition in La2CoMnO6 from first principles Appl. Phys. Lett. 99, 202110 (2011) The role of plasmons and interband transitions in the color of AuAl2, AuIn2, and AuGa2 Appl. Phys. Lett. 99, 111908 (2011) Additional information on J. Chem. Phys. Quantum coherence between electron and ion dynamics, observed in organic semiconductors by means of ultrafast spectroscopy, is the object of recent theoretical and computational studies. To simulate this kind of quantum coherent dynamics, we have introduced in a previous article [L. Stella, M. Meister, A. J. Fisher, and A. P. Horsfield, J. Chem. Phys. 127, 214104 (2007)] an improved computational scheme based on Correlated Electron-Ion Dynamics (CEID). In this article, we provide a generalization of that scheme to model several ionic degrees of freedom and many-body electronic states. To illustrate the capability of this extended CEID, we study a model system which displays the electron-ion analog of the Rabi oscillations. Finally, we discuss convergence and scaling properties of the extended CEID along with its applicability to more realistic problems.

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Phonon bottleneck in quantum dots: Role of lifetime of the confined optical phonons

Cited by 194 publications

References 24 publications

Quantum dot energy relaxation mediated by plasmon emission in doped covalent semiconductor heterostructures

Quantum dot energy relaxation mediated by plasmon emission in doped covalent semiconductor heterostructures

Direct observation of excitonic polaron in InAs/GaAs quantum dots

Analog of Rabi oscillations in resonant electron-ion systems

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