Phonon‐assisted exciton annihilation in CdSe crystals

Абрамов, В. А.; Permogorov, S.; Razbirin, B. S.; Ekimov, A. I.

doi:10.1002/pssb.19700420216

Cited by 15 publications

(7 citation statements)

References 3 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…the exciton state in the case under consideration. It has been shown experimentally that in A,B, crystals the probability of exciton-phonon transitions with simultaneous creation of 3 LO phonons is much smaller than that of 2 LO processes [51]. Due to this fact, the model of multiphonon resonance Raman scattering cannot explain the experimental results of Fig.…”

Section: Intensity Distribution In the Spectrummentioning

confidence: 92%

“…The probability of multiphonon optical transitions for the exciton can be directly measured in the phonon-assisted exciton emission spectrum. The investigation of these spectra in many crystals [14, 15,51 to 531 shows that transitions with simultaneous creation of one or two LO phonons have the highest probability, whereas the probability of processes with simultaneous creation of three or more LO phonons is vanishingly small. 18.…”

mentioning

confidence: 99%

See 1 more Smart Citation

Hot excitons in semiconductors

Permogorov

1975

Physica Status Solidi (b)

213

View full text Add to dashboard Cite

Section: Intensity Distribution In the Spectrummentioning

confidence: 92%

mentioning

confidence: 99%

Hot excitons in semiconductors

Permogorov

1975

Physica Status Solidi (b)

213

View full text Add to dashboard Cite

“…Assuming the same lattice temperature, TL = 11 K in agreement with our estimation, in Fig. 3 , 4 , we use the energy of the lST exciton just a t 11 K equal to 1.824 eV [7]. The mark in Fig.…”

Section: Radiativementioning

confidence: 78%

“…However, for delays longer than 300 ps, we could deduce the exciton temperature ( Fig. 4) from the fit of the A-LO lineshape by this Boltzmann model, using a previous study of the temperature of exciton lines in CdSe [7]. The exciton gas beging non-degenerate, and neglecting the polariton effect we know that the mean energy per particle is ( E ) = kT, and so d(E)/dt = f k dT/dt.…”

Section: Pfmentioning

confidence: 99%

Picosecond Spectroscopy of CdSe at High Excitation

Collet

Pugnet

Cornet

et al. 1981

Physica Status Solidi (b)

Self Cite

View full text Add to dashboard Cite

At 4.2 K, the time resolved luminescence is studied of CdSe platelets, using two-photon excitation a t 1.064 pm and monopulsed excitation. At first the importance is shown of lattice heating and quasiparticle heating in high excitation experiments in CdSe. Then, the simultaneous kinetics of the A-LO excitonic line and the so-called P line is studied. In the experiments, the P line cannot a t all be interpreted as resulting of radiative exciton-exciton collisions. It is shown that the previously proposed radiative transition from the r, biexciton ground state to the 2p exciton state provides the best understanding of the dynamical behaviour of the P line. A binding energy of 1.4 meV for the biexciton in CdSe is deduced.Nous avons 6tudiB B 4,2 K, la luminescence r6solue en temps de platelets de CdSe, par excitation B 2 photons ( B 1.064 pm) et excitation monopulsbe. Nous mettons bien en Bvidence I'importance de 1'Bchauffement du r6seau e t des quasiparticules dans les expbriences de forte excitation sur CdSe. Par la suite nous Btudions les cinetiques simultanBes de la raie excitonique A-LO, et de la raie P. Dans nos expkriences, la raie P ne peut absolument pas 6tre interprBt6e comme r6sultant de collisions radiative5 exciton-exciton. Nous montrons que le processes d6jB propos6, de transition radiative du biexciton rl (&at fondamental) vers un exciton dans l'6tat 2p, fournit la meilleure comprehension du comportement dynamique de la raie P. Nous dBduisons une Bnergie de liaison 1.4 meV de 1,4 meV pour le biexciton dam CdSe.

show abstract

“…The short-wave wing is well described by the Maxwellian distribution. The disagreement between theoretical and experimental contours a t the long-wave boundary is typical for high-temperature lineshapes of phonon replicas of free excitons in many crystals (CdS, CdSl [14], for example) and, possibly, is due t o the attenuation of polaritons 1151.…”

Section: To -Ell2 Exp ( -E / K T ) For Temperatures Of 80mentioning

confidence: 98%

Secondary emission of excitons in CuCl polycrystals

Mashchenko

Kharsik

Brezhneva

1986

Physica Status Solidi (b)

View full text Add to dashboard Cite

Secondary emission (SE) spectra of CuCl platelets and quenched bulk polycrystals, grown from a solution a t 4.5 to 200 K, are studied. The low-temperature S E spectra are caused by the radiative decay of free and bound excitons of the rS-rS series. The S E at T = 77 K is due to the annihilation of free excitons of the Z,( I?-r8) series. The growth of excitation gives rise t o considerable increasing the phonon replica intensity (Z3-2LO), which is dominating in a spectrum within the range of excitation rates from loz7 to 1030 s-l, when the emission appears to be stimulated one. The translational mass of excitons and the reduced mass of a hole ( 3 . 4~~~ and 2.9 to 3.0 ?no, respectively) are calculated from the line approximation by a Maxwellian contour. The increase of the exciton-phonon coupling constant when introducing imperfections is found experimentally, and the new data obtained are discussed.Es werden die Sekundaremissions (SE)-Spektren von CuC1-Plattchen und abgeschreckten Volumenpolykristallen, die aus der Losung bei 4,5 bis 200 K erhalten werden, untersucht. Die Niedertemperatur-SE-Spektren werden durch strahlenden Zerfall von freien und gebundenen Exzitonen der F,-r,-Serien hervorgerufen. Die S E bei T = 77 K wird durch die Annihilation freier Exzitonen der Z3(I'6-I'8)-Serien verursacht. Erhohung der Anregung gibt AnlaD zu einem betrachtlichen Anwachsen der Intensitat der Phononenrepliken (Z3-2LO), die in einem Spektrum im Bereich der Anregungsraten von loz7 bis 1030 dominiert, wenn stimulierte Emission einsetzt. Die Translationsmssse der Exzitonen und die reduzierte Masse eines Loches (3,4m0 bzw. 2,9 bis 3,0 m,) werden aus der Linienniherung mit einem Maxwellprofil berechnet. Ein Anwachsen der Exziton-Phonon-Kopplungskonstante bei Einfiihrung von Storstellen wird experimentell gefunden, und die neuen erhaltenen Daten werden diskutiert.

show abstract

Phonon‐assisted exciton annihilation in CdSe crystals

Cited by 15 publications

References 3 publications

Hot excitons in semiconductors

Hot excitons in semiconductors

Picosecond Spectroscopy of CdSe at High Excitation

Secondary emission of excitons in CuCl polycrystals

Contact Info

Product

Resources

About